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Affichage de 10531 à 10540 sur 16459

Communication dans un congrès

Influence of temperature on high frequency performance of graphene nano ribbon field effect

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

68th Device Research Conference, DRC 2010, 2010, United States. pp.69-70, ⟨10.1109/DRC.2010.5551934⟩. ⟨hal-00549925⟩

Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

Article dans une revue

Terahertz spiral planar Goubau line rejectors for biological characterization

A. Treizebre, Maxence Hofman, Bertrand Bocquet

Terahertz spectroscopy brings precious complementary information in life science by probing directly low energy bindings inside matter. This property has been demonstrated on dehydrated substances, and interesting results are obtained on liquid solutions. The next step is the characterization of...

Progress In Electromagnetics Research M, 2010, 14, pp.163-176. ⟨10.2528/PIERM10072110⟩. ⟨hal-00549501⟩

Brevet

Procédé de fabrication de transistors MOSFET complémentaires de type P et N, et dispositif électronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif

Guilhem Larrieu, Emmanuel Dubois

Communication dans un congrès

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

Thèse

Study of electronic properties of nanostructures by ultrahigh vacuum atomic force microscopy, Étude de propriétés électroniques de nanostructures par microscopie à force atomique sous ultra-vide

Lukasz Borowik

We study the electronic properties of nanostructures using atomic force microscopy in ultra-high vacuum environment. The first part of this work consists in the characterization of silicon nanowires grown by metal-catalyzed chemical vapour deposition on silicon substrates, using conducting atomic..., Cette thèse est consacrée à l'étude des propriétés électroniques de nanostructures par microscopie à force atomique (AFM) en ultra-vide. La première partie de ce travail a consisté à caractériser localement des nanofils de silicium par technique d'AFM conducteur. Les expériences de...

Physics [physics]. Université des Sciences et Technologie de Lille - Lille I, 2009. English. ⟨NNT : ⟩. ⟨tel-00466670⟩

Article dans une revue

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for...

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩