Publicaciones

• Proceedings/Recueil des communications

On categories and scientific approach in historical discourse

Raffaele Pisano, Ilaria Gaudiello

Style of Thinking in Science and Technology Proceedings of 3rd European Society of the History of Science Conference, Austrian Academy of Sciences Press, pp.187-197, 2009, 978-3700168461. ⟨hal-04513905⟩

• Article dans une revue

Anisotropic propagation and confinement of high frequency phonons in nanocomposites

A. Sato, W. Knoll, Yan Pennec, Bahram Djafari-Rouhani, G. Fytas, M. Steinhart

The Journal of Chemical Physics, 2009, 130, pp.111102-1-4. ⟨10.1063/1.3096972⟩. ⟨hal-00473073⟩

• Article dans une revue

A batch-fabricated and electret-free silicon electrostatic vibration energy harvester

Philippe Basset, Dimitri Galayko, Ayyaz Mahmood Paracha, Frédéric Marty, Andrii Dudka, Tarik Bourouina

This paper presents a novel silicon-based and batch-processed MEMS electrostatic transducer for harvesting and converting the energy of vibrations into electrical energy without using an electret layer. Effective conversion from the mechanical-to-electric domains of 61 nW on a 60 M Omega resistive...

Journal of Micromechanics and Microengineering, 2009, 19 (11), pp.115025. ⟨10.1088/0960-1317/19/11/115025⟩. ⟨hal-00692939⟩

• Proceedings/Recueil des communications

Il ruolo della scienza archimedea nei lavori di meccanica di Galilei e di Torricelli (The role of Archimedean science in the mechanical works of Galileo and Torricelli)

Raffaele Pisano

From Archimedes To Majorana: Physics in its development. Proceedings of 6th SISFA Conference Sociatá Italiana degli Storici della Fisica e dell'Astronomia, Guaraldi, pp.65-74, 2009, 978–888–049–349–5. ⟨hal-04517946⟩

• Article dans une revue

Light polarized resonant Raman spectra from individual single- and double-wall carbon nanotubes

Jaroslaw Judek, David Brunel, Thierry Melin, Marcin Marczak, Mariusz Zdrojek, Wojciech Gȩbicki, Leszek Adamowicz

Measured light polarization dependent resonant Raman spectra from spatially isolated semiconducting single- and double-wall carbon nanotubes are reported. Most of the observed modes intensities exhibit two or fourfold symmetry, for VV and VH configuration, respectively. Weak quantitative changes in...

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2056-2059. ⟨10.1002/pssc.200881757⟩. ⟨hal-00473404⟩

• Communication dans un congrès

Molecular dynamics simulation for advanced silicon recrystallization effect

Christophe Krzeminski, E. Lampin

European Materials Research Society Spring Meeting, E-MRS Spring 2009, Symposium I : Silicon and Germanium issues for future CMOS devices, 2009, Strasbourg, France. ⟨hal-00575269⟩

• Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

• Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

• Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

• Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩