Publicaciones
Affichage de 11991 à 12000 sur 16462
High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications
S. Joblot, Y. Cordier, F. Semond, P. Vennegues, Sébastien Chenot, P. Lorenzini, M. Portail, J. Massies, J.C. Gerbedoen, A. Soltani, Christophe Gaquière, Jean-Claude de Jaeger
Materials Research Society Spring Meeting, MRS Spring 2008, Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates, 2008, San Francisco, CA, United States. ⟨hal-00362029⟩
Preparation of Electrochemical and Surface Plasmon Resonance Active Interfaces: Deposition of Indium Tin Oxide on Silver Thin Films
Sabine Szunerits, Xavier Castel, Rabah Boukherroub
Journal of Physical Chemistry C, 2008, 112, pp.10883-10888. ⟨hal-00402915⟩
Charge injection and electrostatics of tailored graphene sheets and ribbons probed by Electric Force Microscope
A. Mahmood, J.F. Dayen, D. Tondelier, Thierry Melin, D. Vuillaume, Erik Dujardin
International Centre for Theoretical Physics Conference, Graphene Week 2008, 2008, Trieste, Italy. ⟨hal-00376233⟩
Raman spectroscopy of boron-doped silicon nanowires
M. Marczak, E. Pichonat, W. Gebicki, Thierry Melin, D. Hourlier
European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium J : New Opportunities and Challenges in Material Research using Phonon and Vibrational Spectra, 2008, Warsaw, Poland. ⟨hal-00376240⟩
Electronic properties of organic monolayers and molecular devices
D. Vuillaume
Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩
Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS
M. Detalle
2008. ⟨hal-00362347⟩
Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure
M. Detalle, Denis Remiens
Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩
Structural and electrical properties of Au and Ti/Au contacts to n-type GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua
Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩
Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires
A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier
Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩
Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection
L. Marcon, D. Stievenard, O. Melnyk
Bioconjugate Chemistry, 2008, 19, pp.802-805. ⟨10.1021/bc8000084⟩. ⟨hal-00357336⟩