Publicaciones

• Communication dans un congrès

Détection et évaluation des tensions de décalage d'un circuit analogique

Ramy Iskander, Marie-Minerve Louërat, Andreas Kaiser

Nous avons précédemment conçu une méthode pour dimensionner et polariser un circuit analogique en nous appuyant sur un graphe de dépendance. Cependant, à cause du nombre élevé de degrés de liberté présents dans un circuit analogique, des conflits peuvent apparaître dans ce graphe. Ici, nous...

TAISA Colloque sur le Traitement Analogique de l'Information du Signal et ses Applications, 2007, Lyon, France. pp.13-16. ⟨hal-01311544⟩

• Communication dans un congrès

Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System

Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

11th IEEE Workshop on Signal Propagation on Interconnects, SPI 2007, May 2007, Genova, Italy. pp.24-28, ⟨10.1109/SPI.2007.4512199⟩. ⟨lirmm-00148905⟩

• Article dans une revue

Phonon phenomenon in the interaction of guided ultrasonic waves with a surface grating

B. Morvan, Anne-Christine Hladky, D. Leduc, J.L. Izbicki

Journal of Physics: Conference Series, 2007, 92, pp.012104-1-4. ⟨10.1088/1742-6596/92/1/012104⟩. ⟨hal-00285624⟩

• Article dans une revue

Peptide immobilization on amine-terminated boron-doped diamond surfaces.

Leon Gengembre, Rabah Boukherroub, Yannick Coffinier, Didier Delabouglise, Remi Desmet, Charafeddine Jama, Bernadette Marcus, Oleg Melnyk, Sabine Szunerits, E. Payen

This paper reports on the formation and characterization of semicarbazide termination on aminated boron-doped diamond (BDD) surfaces, and further prepn. of peptide microarray through site-specific a-oxo semicarbazone ligation. Hydrogen-terminated BDD electrodes were first aminated using NH3 plasma...

Langmuir, 2007, 23 (8), pp.4494-4497. ⟨10.1021/la063440y⟩. ⟨hal-00179759⟩

• Article dans une revue

Comment on 'Sensitivity of surface states to the stack sequences of one-dimensional photonic crystals

Y. El Hassouani, E.H. El Boudouti, H. Aynaou, Bahram Djafari-Rouhani, V.R. Velasco

Comment on 'Sensitivity of surface states to the stack sequences of one-dimensional photonic crystals'. Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.308-313. ⟨10.1088/1464-4258/9/3/N01⟩. ⟨hal-00283125⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at...

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

Calculation and measurement of the magnetostriction of multilayered composites

L. Garcia-Gancedo, S. Busbridge, Philippe Pernod, Vladimir Preobrazhensky, O. Ducloux

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2627-2629. ⟨10.1016/j.jmmm.2006.11.051⟩. ⟨hal-00285635⟩

• Article dans une revue

On the use of ultrasounds to quantify the longitudinal threshold force to detach osteoblastic cells from a conditioned glass substrate

Dorothée Debavelaere-Callens, L. Peyre, Pierre Campistron, H.F. Hildebrand

Biomolecuar Engineering, 2007, 24, pp.521-525. ⟨10.1016/j.bioeng.2007.08.016⟩. ⟨hal-00285683⟩

• Article dans une revue

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a...

Microelectronics Journal, 2007, 38 (1), pp.7-13. ⟨10.1016/j.mejo.2006.07.025⟩. ⟨hal-00283492⟩