Publicaciones
Affichage de 15781 à 15790 sur 16474
Silicon nitride passivation on GaN MESFET's
Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, Jean-Claude de Jaeger, F. Omnes
2000, pp.VIII-11, VIII-12. ⟨hal-00159001⟩
Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate
N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, S. Bollaert, Y. Cordier, D. Theron, A. Cappy
2000, 10 pp. ⟨hal-00159003⟩
Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence
S. Trassaert
2000. ⟨hal-00158975⟩
First results of GaN MESFET's realized on (111) Si
Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩
On the design of multimode ultrasonic transducers for acoustooptic correlation applications
Jean-Michel Rouvaen, Atika Rivenq, P. Logette, Philippe Goutin, F. Haine
Journal of Physics D: Applied Physics, 2000, 33, pp.3041-3052. ⟨hal-00159047⟩
Weighting functions for near field microwave radiometry and applications
Ahmed Mamouni, T. Lasri, Bertrand Bocquet, Y. Leroy
Proceedings of the 2000 Progress in Electromagnetics Research Symposium, PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158174⟩
Caractérisation des tumeurs du sein par imagerie radiométrique microonde
Bertrand Bocquet, Y. Leroy, Ahmed Mamouni, N. Rocourt, Patrick Devos, Y. Robert
6èmes Journées Caractérisation Microonde et Matériaux, JCMM 2000, 2000, Paris, France. ⟨hal-00158168⟩
Kinetics of oxydation by scanning probe microscopy : a space-charge-limited model
Emmanuel Dubois, J.L. Bubendorff
Journal of Applied Physics, 2000, 87, pp.8148-8154. ⟨10.1063/1.373510⟩. ⟨hal-00158510⟩
Low field anisotropic magnetostriction of single domain exchange-coupled (TbFe/Fe) multilayers
Henri Le Gall, Jamal Ben Youssef, F. Socha, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod
Journal of Applied Physics, 2000, 87, pp.5783-5785. ⟨10.1063/1.372521⟩. ⟨hal-00158455⟩