Publicaciones

Affichage de 3001 à 3010 sur 16551


  • Article dans une revue

Combined surface x-ray diffraction and density functional theory study of the germanene/Al(111)-(7×7) R19.1° structure

K. Zhang, M.C. Hanf, D. Sciacca, Romain Bernard, Yves Borensztein, A. Resta, Yves Garreau, A. Vlad, A. Coati, Isabelle Lefebvre, M. Derivaz, C. Pirri, P. Sonnet, R. Stephan, G. Prévot

Several studies have reported the possible growth of germanene on various metal surfaces. However, the exact structure of the layers formed upon evaporation at or above room temperature remains controversial. In particular, the layers obtained after Ge deposition on Al(111) have been either...

Physical Review B, 2022, 106 (4), pp.045412. ⟨10.1103/PhysRevB.106.045412⟩. ⟨hal-03742119⟩

  • Communication dans un congrès

Sub-nanosecond pulse technology applied to millimetre wave systems for TDoA-based geolocalization

Christophe Loyez, Michael Bocquet, Nathalie Rolland, Kamel Haddadi

This study deals with a geolocation system that uses sub-nanosecond pulsed radio signals. Based on Time Difference of Arrival (TDoA), it allows the localization of 60-GHz transmitters in an indoor environment with an accuracy compatible with the requirements of the next generation of communicating...

2022 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNeT), Jan 2022, Las Vegas, United States. pp.50-53, ⟨10.1109/WiSNet53095.2022.9721359⟩. ⟨hal-03600035⟩

  • Article dans une revue

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, M Diallo, Vanessa Avramovic, Kamel Haddadi, X. Wallart, L. Desplanque

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and...

Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩. ⟨hal-03547003⟩