Publicaciones

• Article dans une revue

High frequency ultrasound measurements on a translucent thin bioglass, based on Si, Ca, Na : study of the distribution of elastic modulus

A. Bachar, Georges Nassar, Cyrille Albert-Mercier, F. Bouchart, C. Follet, R. Amrousse, M. Kazan

Optical Materials, 2013, 36, pp.75-79. ⟨10.1016/j.optmat.2013.05.009⟩. ⟨hal-00877713⟩

• Article dans une revue

Tunable interdigitated capacitances on Ba0.3Sr0.7TiO3 thin-film

A. Ghalem, Freddy Ponchel, Denis Remiens, Jean-François Legier, T. Lasri

Integrated Ferroelectrics, 2013, 142, pp.44-51. ⟨10.1080/10584587.2013.780151⟩. ⟨hal-00877714⟩

• Autre publication scientifique

Modélisation de la propagation et de la réception des ondes élastiques émises par un défaut sous contrainte. Application à la simulation des contrôles non-destructifs par émission acoustique

Warida Ben Khalifa

2013. ⟨hal-00799262⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Communication dans un congrès

Les effets du couplage inter-éléments dans les réseaux de transducteurs acoustiques

Abdelmajid Bybi, Jamal Assaad, Sébastien Grondel, Marc Duquennoy, Anne-Christine Hladky, Christian Granger

6ème Colloque Interdisciplinaire en Instrumentation, C2I 2013, 2013, Lyon, France. pp.47-54. ⟨hal-00955219⟩

• Article dans une revue

Robust surface-potential-based compact model for GaN HEMT IC design

S. Khandelwal, C. Yadav, S. Agnihotri, Y.S. Chauhan, A. Curutchet, T. Zimmer, J.C. Dejaeger, N. Defrance, T.A. Fjeldly

IEEE Transactions on Electron Devices, 2013, 60, pp.3216-3222. ⟨10.1109/TED.2013.2265320⟩. ⟨hal-00872023⟩

• Communication dans un congrès

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

M. Faucher, G. Martin, J.M. Friedt, S. Ballandras

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first...

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. paper IFCS-EFTF1-B2-5, 21-24, ⟨10.1109/EFTF-IFC.2013.6702231⟩. ⟨hal-00944027⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed...

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Communication dans un congrès

La piézorésistance géante dans les structures de silicium pour les microsystèmes

A.C.H. Rowe, S. Arscott

Journées Nationales Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France. ⟨hal-00904714⟩

• Communication dans un congrès

A new photomechanical molecular switch based on a linear π-conjugated system

S. Lenfant, D. Demeter, M. Oçafrain, P. Blanchard, David Guérin, Christophe Krzeminski, F. Cleri, J. Roncali, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878937⟩