Publicaciones

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current...

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Article dans une revue

Golden ratio-based and tapered diptera inspired wings : their design and fabrication using standard MEMS technology

X.Q. Bao, Eric Cattan

Journal of Bionic Engineering, 2011, 8, pp.174-180. ⟨10.1016/S1672-6529(11)60023-1⟩. ⟨hal-00603032⟩

• Article dans une revue

Opposition control with arrayed actuators in the near-wall region of a spatially-developing turbulent boundary layer

M. Pamies, E. Garnier, A. Merlen, P. Sagaut

International Journal of Heat and Fluid Flow, 2011, 32, pp.621-630. ⟨10.1016/j.ijheatfluidflow.2011.03.005⟩. ⟨hal-00597083⟩

• Article dans une revue

Effect of dimensional parameters on the current of MSM photodetector

Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with...

Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩

• Article dans une revue

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn

Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩

• Communication dans un congrès

Growth of zinc oxide nanorods in water vapor environment and its promising role in solar cell

Basma El Zein, I. Gereige, S. Boulfrad, A. Gokarna, El Hadj Dogheche, Didier Decoster, S. Habib, G. Jabbour

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800057⟩

• Communication dans un congrès

Growth of antimony-containing nanowires

Philippe Caroff, Kimberly A. Dick, C. Thelander, S.R. Plissard, X. Wallart

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591392⟩