Publicaciones

• Article dans une revue

Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross sectional Atomic Force Microscopy

F. Lelarge, C. Priester, C. Constantin, A. Rudra, K. Leifer, E. Kapon

Applied Surface Science, 2000, 166, pp.290-294. ⟨hal-00158661⟩

• Communication dans un congrès

10 GHz load-pull measurements for a 0,3 µm-N-HIGFET

M. Touirat, M. Roger, E. Delos, L. Nuyen, Y. Crosnier, G. Salmer

2000, pp.VI-7, VI-8. ⟨hal-00157874⟩

• Communication dans un congrès

Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation

J. Mateos-Lopez, T. Gonzalez, D. Pardo, Virginie Hoel, S. Bollaert, A. Cappy

2000, pp.624-627. ⟨hal-00157877⟩

• Article dans une revue

Microwave methods and systems for nondestructive control

T. Lasri, D. Glay, Latifa Achrait-Furlan, Ahmed Mamouni, Y. Leroy

In the past the use of network analyzersfor measuring the electrical properties of materialsmakes the microwave techniques unsuitable for industrial purposes. Butrecently much attention has been paid to the development of microwave systems dedicated to the nondestructive testing of materials. In...

Subsurface Sensing Technologies and Applications, 2000, 1, pp.141-160. ⟨hal-00158128⟩

• Communication dans un congrès

Monolithic microwave integrated GaAs electromagnetically-coupled antennas

M. Grzeskowiak, J. Vindevoghel

2000, pp.170-173. ⟨hal-00158144⟩

• Communication dans un congrès

Narrowband active GaAs MMIC filters in K-band

J. Vindevoghel, P. Descamps

2000, pp.147-150. ⟨hal-00158160⟩

• Article dans une revue

FECTED oscillator optronic application feasibility

F. Driouch, M.R. Friscourt, Christophe Dalle

Solid-State Electronics, 2000, 44, pp.1455-1461. ⟨hal-00158131⟩

• Article dans une revue

Temperature control by microwave radiometry with narrow bandwidth

Luc Dubois, C. Vanoverschelde, V. Thomy, J.P. Sozanski, M. Chive

European Physical Journal: Applied Physics, 2000, 9, pp.63-68. ⟨hal-00158150⟩

• Communication dans un congrès

Frequency difference generation in the terahertz region using LTG-GaAs photodetector

Emilien Peytavit, Gaël Mouret, Jean-Francois Lampin, Pascal Masselin, P. Mounaix, F. Mollot, D. Lippens

We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1...

8th International Conference on Terahertz Electronics, Sep 2000, Darmstadt, Germany. pp.45-48. ⟨hal-00158220⟩

• Communication dans un congrès

Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study

D. Vignaud, F. Mollot

Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China. ⟨hal-00158221⟩