Publicaciones

• Communication dans un congrès

Microrobot autonome

Philippe Basset, A. Kaiser, L. Buchaillot, P. Masquelier

Actes des 3èmes Journées Nationales du Réseau Doctoral de Microélectronique, 2000, Montpellier, France. ⟨hal-00158520⟩

• Communication dans un congrès

Theoretical limits for signal reflections due to inductance for on-chip interconnections

Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht, Gregory Servel

2000, pp.55-60. ⟨hal-00158603⟩

• Article dans une revue

Excitonic and quasiparticle gaps on Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to...

Physical Review Letters, 2000, 84, pp.2457-2460. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158640⟩

• Communication dans un congrès

Transmission line analysis via THz photoconductive sampling

Jean-Francois Lampin, F. Mollot

International Terahertz Workshop, 2000, Sandbjerg, Denmark. ⟨hal-00158448⟩

• Autre publication scientifique

Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence

S. Trassaert

2000. ⟨hal-00158975⟩

• Article dans une revue

On the design of multimode ultrasonic transducers for acoustooptic correlation applications

Jean-Michel Rouvaen, Atika Rivenq, P. Logette, Philippe Goutin, F. Haine

Journal of Physics D: Applied Physics, 2000, 33, pp.3041-3052. ⟨hal-00159047⟩

• Article dans une revue

Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si

Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant

Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩

• Article dans une revue

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh...

Applied Physics Letters, 2000, 76, pp.3271-3273. ⟨10.1063/1.126603⟩. ⟨hal-00158537⟩

• Article dans une revue

Design and simulation of a dual mode semiconductor laser using sampled grating DFB structure

M. Hussein-Mourad, Jean-Pierre Vilcot, Didier Decoster, D. Marcenac

IEE Proceedings. Optolectronics, 2000, 147, pp.37-42. ⟨hal-00158552⟩

• Article dans une revue

X-ray diffraction from perfect silicon crystals distorted by surface acoustic waves

R. Tucoulou, R. Pascal, M. Brunel, O. Mathon, D.V. Roshchupkin, I.A. Schelokov, Eric Cattan, Denis Remiens

Journal of Applied Crystallography, 2000, 33, pp.1019-1022. ⟨hal-00158555⟩