Publicaciones

• Article dans une revue

Are CNNs reliable enough for critical applications? An exploratory study

Mohamed Ayoub Neggaz, Ihsen Alouani, Smail Niar, Fadi Kurdahi

Resource-constrained CNN implementations are subject to various reliability threats. This article provides an exploratory study investigating the impact of faults (soft errors modeled as bit flips) across the parameters of CNNs and the impact on the CNN weights, which can be used to create...

IEEE Design & Test, 2020, 37 (2), pp.76-83. ⟨10.1109/MDAT.2019.2952336⟩. ⟨hal-03321520⟩

• Article dans une revue

Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances

Khaoula Ferchichi, Ramzi Bourguiga, Kamal Lmimouni, Sébastien Pecqueur

Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve record conductivity values of one of the most...

Synthetic Metals, 2020, 262, pp.116352. ⟨10.1016/j.synthmet.2020.116352⟩. ⟨hal-02509617⟩

• Article dans une revue

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, F Medjdoub

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without...

Physica Status Solidi A (applications and materials science), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩

• Article dans une revue

Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet, Luan Nguyen, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Rémi Comyn, Thi Huong Ngo, Marcin Zielinski, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic...

Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩. ⟨hal-02929058⟩

• Article dans une revue

Pd nanoparticles supported on reduced graphene oxide as an effective and reusable heterogeneous catalyst for the Mizoroki–Heck coupling reaction

Maryam Mirza‐aghayan, Marzieh Mohammadi, Ahmed Addad, Rabah Boukherroub

Applied Organometallic Chemistry, 2020, 34 (4), ⟨10.1002/aoc.5524⟩. ⟨hal-03090066⟩

• Article dans une revue

Covert Capacity of Non-Coherent Rayleigh-Fading Channels

Mehrdad Tahmasbi, Anne Savard, Matthieu Bloch

The covert capacity is characterized for a non-coherent fast Rayleigh-fading wireless channel, in which a legitimate user wishes to communicate reliably with a legitimate receiver while escaping detection from a warden. It is shown that the covert capacity is achieved with an amplitude-constrained...

IEEE Transactions on Information Theory, 2020, 66 (4), pp.1979-2005. ⟨10.1109/TIT.2019.2956489⟩. ⟨hal-02441829⟩

• Article dans une revue

Acoustic demultiplexer based on Fano and induced transparency resonances in slender tubes star star star

Abdelkader Mouadili, El Houssaine El Boudouti, Bahram Djafari-Rouhani

We give an analytical demonstration of the possibility to realize a simple phononic demultiplexer based on Fano and acoustic induced transparency resonances. The demultiplexer consists of a Y-shaped waveguide with an input line and two output lines. Each output line contains two stubs grafted...

European Physical Journal: Applied Physics, 2020, 90 (1), 10902, 8 p. ⟨10.1051/epjap/2020190324⟩. ⟨hal-03321570⟩

• Article dans une revue

Joint channel estimation and data detection for OFDM based cooperative system

Mokhtar Besseghier, Ahmed Bouzidi Djebbar, Abdelhak Zouggaret, Iyad Dayoub

Orthogonal frequency division multiplexing based cooperative system using Alamouti space–time block coding at relay node represents an alternative solution to achieve better connectivity and significant enhancement to the data rate in wireless fading channels. But, these advantages cannot be...

Telecommunication Systems, 2020, 73 (4), pp.545-556. ⟨10.1007/s11235-019-00622-3⟩. ⟨hal-03382877⟩

• Article dans une revue

Surface spin magnetism controls the polarized exciton emission from CdSe nanoplatelets

Elena V Shornikova, Aleksandr A Golovatenko, Dmitri R Yakovlev, Anna V Rodina, Louis Biadala, Gang Qiang, Alexis Kuntzmann, Michel Nasilowski, Benoit Dubertret, Anatolii Polovitsyn, Iwan Moreels, Manfred Bayer

The surface of nominally diamagnetic colloidal CdSe nanoplatelets can demonstrate para-magnetism owing to the uncompensated spins of dangling bonds (DBSs). We reveal that by optical spectroscopy in high magnetic fields up to 15 Tesla using the exciton spin as probe of the surface magnetism. The...

Nature Nanotechnology, 2020, 15, pp.277-282. ⟨10.1038/s41565-019-0631-7⟩. ⟨hal-02394926⟩

• Article dans une revue

Unravelling local environments in mixed TiO2–SiO2 thin films by XPS and ab initio calculations

Pavel Ondračka, David Nečas, Michèle Carette, Stéphane Elisabeth, David Holec, Agnès A. Granier, Antoine Goullet, Lenka Zajíčková, Mireille Richard-Plouet

Mixed TixSi1−xO2 oxide can exhibit a partial phase separation of the TiO2 and SiO2 phases at the atomic level. The quantification of TiO2-SiO2 mixing in the amorphous material is complicated and was so far done mostly by infrared spectroscopy. We developed a new approach to the fitting of X-ray...

Applied Surface Science, 2020, 510, pp.145056. ⟨10.1016/j.apsusc.2019.145056⟩. ⟨hal-02507953⟩