Publicaciones

Affichage de 471 à 480 sur 16556


  • Communication dans un congrès

Textile-based metamaterials for electromagnetic wave filtering and guiding

Ali Ghaddar, Baptiste Garnier, Cédric Cochrane, François Rault, Vladan Koncar, Eric Lheurette, Ludovic Burgnies

Metamaterials produced by weaving and embroidery are presented for electromagnetic wave filtering and surface wave guiding, respectively. First, experiments evidence a phase advance of a traveling wave through a woven metamaterial with a high-pass feature around 27 GHz. Second, meander-shaped...

2025 7th International Conference on the Challenges, Opportunities, Innovations and Applications in Electronic Textiles (E-Textiles), Nov 2025, Roubaix, France. pp.1-6, ⟨10.1109/E-Textiles67498.2025.11686570⟩. ⟨hal-05820861⟩

  • Communication dans un congrès

Remarkable electronic and optical properties of HgTe quantum dots

Antoine Hage, Christophe Delerue

HgTe is a very special material. Semi-metallic in bulk, it can become semiconducting under the effect of quantum confinement. This is well known in the case of quantum wells based on HgCdTe/HgTe/HgCdTe heterostructures with infrared optoelectronic properties at the heart of current applications....

International Symposium on Quantum Science and Engineering IQSE-2025, Unesco - International Year of Quantum Science and Technology, Nov 2025, Tunja, Colombia. ⟨hal-05363691⟩

  • Communication dans un congrès

Digital Predistortion of D-Band Power Amplifiers Using AI-Based Nonlinearity Compensation

Hiba Alqasir, Justine Mauro, Ihsen Alouani, Iyad Dayoub

This paper presents the first demonstration of a neural network-based digital predistortion (DPD) architecture for compensating nonlinearities in real D-band power amplifiers (PAs). The proposed method employs two separate models to independently correct amplitude (AM/AM) and phase (AM/PM)...

2025 IEEE Middle East Conference on Communications and Networking (MECOM), Nov 2025, Cairo, Egypt. pp.1-6, ⟨10.1109/MECOM67453.2025.11439105⟩. ⟨hal-05620573⟩

  • Communication dans un congrès

Accommodation of highly mismatched III-V semiconductors by nanoscale selective area growth

Ludovic Desplanque, C Barbot, W Khelifi, Christophe Coinon, M Berthe, Y Deblock, David Troadec, X Wallart, B Grandidier, G Patriarche, Qianqian Lan, Ph Ebert, N Chaize, P.-H Jouneau, H Sellier

<div><p>Semiconductors with a low electron effective mass and a strong spin-orbit interaction, such as indium arsenide (InAs) and indium antimonide (InSb), are particularly appealing for the fabrication of advanced electronic and quantum devices. However, their development for...

Conférence MATEPI 2025, Nov 2025, Villeneuve-d'Ascq, France. ⟨hal-05502360⟩