Publicaciones

Affichage de 7191 à 7200 sur 16442


  • Article dans une revue

Ultrawide-bandwidth single-channel 0.4-THz wireless link combining broadband quasi-optic photomixer and coherent detection

Guillaume Ducournau, P. Szriftgiser, Alexandre Beck, Denis Bacquet, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Tahsin Akalin, Jean-Francois Lampin

Free space communications with huge data capacity have become a key point for the development of mobile access, services, and network technologies convergence. Wireless links using emerging terahertz technologies, also referred to as T-ray communications, have become an intensive research field...

IEEE Transactions on Terahertz Science and Technology, 2014, 4, pp.328-337. ⟨10.1109/TTHZ.2014.2309006⟩. ⟨hal-00987955⟩

  • Communication dans un congrès

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

Ali Soltani, Abdelkrim Talbi, J-C Gerbedoen, Jean-Claude de Jaeger, Philippe Pernod, V. Mortet, A. Bassam

In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth...

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. pp.2047-2050, ⟨10.1109/ULTSYM.2014.0510⟩. ⟨hal-03276910⟩

  • Chapitre d'ouvrage

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic

Emmanuel Dubois, Aurelien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Yoann Tagro, Francois Danneville, J.F. Robillard, Christine Raynaud, Daniel Gloria, Jacek Ratajczak

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'. Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014. ⟨hal-04249256⟩

  • Communication dans un congrès

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, B. Grandidier

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of...

SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩. ⟨hal-00974539⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'....

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩