Publicaciones

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - II. Vibrational distribution of N2(C3Πu, v') state

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055022-1-11. ⟨hal-00790407⟩

• Article dans une revue

Monte Carlo simulations of single polymer force-extension relations

F. Manca, S. Giordano, Pier Luca Palla, F. Cleri, L. Colombo

Journal of Physics: Conference Series, 2012, 383, pp.012016-1-6. ⟨10.1088/1742-6596/383/1/012016⟩. ⟨hal-00790417⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - I. Kinetics of N2(B3Πg) and N2(C3Πu) states

C. Foissac, J. Kristof, A. Annusova, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055021-1-11. ⟨hal-00790405⟩

• Communication dans un congrès

Evolution of plasmonic resonance of gold nano-blocks embedded in dielectric multilayers

Abdellatif Akjouj, O. Saison, Yan Pennec, Gaëtan Lévêque, Bahram Djafari-Rouhani, Sabine Szunerits, Rabah Boukherroub

SPIE Photonics Europe 2012, Nanophotonics IV, 2012, Brussels, Belgium. ⟨hal-00798149⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

The thermal effect on the output conductance in AlGaN/GaN HEMT's

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

24th International Conference on Microelectronics, ICM 2012, 2012, Algiers, Algeria. pp.1-4, ⟨10.1109/ICM.2012.6471365⟩. ⟨hal-00814968⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Article dans une revue

Enhancement of bonding strength of packaging based on BCB bonding for RF devices

S. Seok, M. Fryziel, N. Rolland, P.A. Rolland

Microsystem Technologies, 2012, 18, pp.2035-2039. ⟨10.1007/s00542-012-1530-0⟩. ⟨hal-00786909⟩

• Article dans une revue

MEMS ring resonators for laserless AFM with sub-nanoNewton force resolution

Emmanuelle Algre, Zhuang Xiong, Marc Faucher, Benjamin Walter, Lionel Buchaillot, Bernard Legrand

A concept of atomic force microscopy (AFM) oscillating sensors using electromechanical silicon microresonators is presented, and imaging capabilities are demonstrated. The microresonators are designed to feature MHz resonance frequencies, and they are batch fabricated using standard silicon...

Journal of Microelectromechanical Systems, 2012, 21, pp.385-397. ⟨10.1109/JMEMS.2011.2179012⟩. ⟨hal-00787407⟩

• Article dans une revue

Conduction degradation in anisotropic multi-cracked materials

S. Giordano, Pier Luca Palla

The European Physical Journal B: Condensed Matter and Complex Systems, 2012, 85, pp.59-1-15. ⟨10.1140/epjb/e2011-20814-5⟩. ⟨hal-00787354⟩