Publicaciones

• Article dans une revue

Interface structure of silicon nanocrystals embedded in an amorphous silica matrix

R. Soulairol, F. Cleri

Solid State Sciences, 2010, 12, pp.163-171. ⟨10.1016/j.solidstatesciences.2009.05.004⟩. ⟨hal-00549076⟩

• Article dans une revue

Graphene on metallic substrates : suppression of the Kohn anomalies in the phonon dispersion

A. Allard, L. Wirtz

Nano Letters, 2010, 10, pp.4335-4340. ⟨10.1021/nl101657v⟩. ⟨hal-00549079⟩

• Communication dans un congrès

325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology

F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud

40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩

• Communication dans un congrès

G-band low noise amplifier and oscillator for synthetic aperture applications

G. Desruelles, N. Rolland, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.525-528. ⟨hal-00549933⟩

• Communication dans un congrès

A compact coplanar waveguide metamaterial-inspired line and its use in tunable narrow bandpass filters

Alejandro Borja, Jorge Carbonell, Vicente Boria, Angel Belenguer, Didier Lippens

In this paper, novel cells, arrays, and reconfigurable metamaterial-inspired coplanar waveguide lines are studied. The novelty stems from the control of the so-called electric and magnetic plasma frequencies by properly designing the loading elements. In particular, wide shunt wires permit one to...

40th European Microwave Conference, EuMC 2010, Sep 2010, Paris, France. pp.922-925, ⟨10.23919/EUMC.2010.5616941⟩. ⟨hal-00549943⟩

• Communication dans un congrès

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

• Article dans une revue

Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, Ydir Androussi, Vincent Magnin, Jean-Francois Lampin

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·...

Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩

• Communication dans un congrès

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and...

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• Communication dans un congrès

Pushing conventional SiGe HBT technology towards 'dotfive' terahertz

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko, Y. Campidelli, L. Depoyan, L. Berthier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.21-24. ⟨hal-00550010⟩