Publicaciones

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and...

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• Communication dans un congrès

Pushing conventional SiGe HBT technology towards 'dotfive' terahertz

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko, Y. Campidelli, L. Depoyan, L. Berthier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.21-24. ⟨hal-00550010⟩

• Communication dans un congrès

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, C. Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Y. Douvry, C. Dua, M. Oualli, M. Piazza, C. Bru-Chevallier, J.M. Bluet, W. Chikhaoui

IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩. ⟨hal-00550009⟩

• Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated...

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

• Chapitre d'ouvrage

Multimode transmitters with ΔΣ-based all-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser

A.H.M. van Roermund, M. Steyaert, H. Casier. Analog circuit design : smart data converters, filters on chip, multimode transmitters, Springer-Verlag, pp.295-314, 2010. ⟨hal-00575857⟩

• Article dans une revue

Calcium wave propagation in chains of endothelial cells with nonlinear reaction dynamics: Green's function approach

P.A. Deymier, K. Runge, M.J. Deymier, J.B. Hoying, Jerome O. Vasseur

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2010, 82, pp.041913-1-13. ⟨10.1103/PhysRevE.82.041913⟩. ⟨hal-00549050⟩

• Communication dans un congrès

Penetration of sound into rough marine sediments : numerical analysis and statistics

Vladislav Aleshin, Laurent Guillon, Ali Khenchaf

The problem of acoustical scattering by rough (rippled) sediments is important for many applications, such as buried objects detection, seafloor characterization, AUV navigation, etc. The presented numerical analysis concerns a general case of an arbitrary grazing angle that can be as low as 5◦ -10...

11th Experimental Chaos and Complexity Conference, ECC11, 2010, Lille, France. ⟨hal-00819458⟩

• Communication dans un congrès

Wide-band receiver architecture with flexible blocker filtering techniques

C. Izquierdo, A. Kaiser, F. Montaudon, P. Cathelin

17th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010, 2010, Greece. pp.894-897, ⟨10.1109/ICECS.2010.5724656⟩. ⟨hal-00579039⟩

• Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTs

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

SPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States. ⟨hal-01904174⟩

• Article dans une revue

Calculating Kelvin force microscopy signals from static force fields

Lukasz Borowik, Koku Kusiaku, Didier Theron, Thierry Melin

We present an analytical formula to achieve numerical simulations of Kelvin force microscopy KFM signals from static force fields, which can be employed to describe amplitude-modulation or frequency-modulation KFM, as well as simultaneous topography and KFM modes for which the tip probe exhibits a...

Applied Physics Letters, 2010, 96, pp.103119-1-3. ⟨10.1063/1.3323098⟩. ⟨hal-00549047⟩