Publicaciones

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC...

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩

• Communication dans un congrès

Pulse shaping with width randomisation for IR-UWB signal

K. Kouakou, Laurent Clavier, D. Issa, P.A. Rolland

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.157-160. ⟨hal-00549930⟩

• Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• Proceedings/Recueil des communications

On the birth of Electromagnetic theory. Faraday and Maxwell

Raffaele Pisano

The Circulation of Science and Technology. Proceedings of the 4th ESHS Conference European Society for the History of Science, University of Barcelona Press, pp.514-515, 2010, 978-84-9965-108-8. ⟨hal-04515840⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

• Article dans une revue

Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE Transactions on Electron Devices, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩. ⟨hal-00567883⟩

• Article dans une revue

Voltage tunable short wire-pair type of metamaterial infiltrated by nematic liquid crystal

F. Zhang, Q. Zhao, W. Zhang, J. Sun, J. Zhou, D. Lippens

Applied Physics Letters, 2010, 97, pp.134103-1-3. ⟨10.1063/1.3496034⟩. ⟨hal-00548702⟩

• Article dans une revue

Thermal noise in MOSFETs : a two- or a three-parameter noise model ?

M. Emam, P. Sakalas, D. Vanhoenacker-Janvier, J.P. Raskin, T.C. Lim, Francois Danneville

IEEE Transactions on Electron Devices, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩. ⟨hal-00548567⟩

• Ouvrages

Scienza e Tecnica Nell'Architettura del Rinascimento (Science and Technology in Renaissance Architecture)

Danilo Capecchi, Raffaele Pisano

CISU, 2010, 978-8879754934. ⟨hal-04515875⟩