Publicaciones

Affichage de 10101 à 10110 sur 16279


  • Article dans une revue

Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

S. Rahmane, B. Abdallah, A. Soussou, E. Gautron, Pierre-Yves Jouan, L. Le Brizoual, Nicolas Barreau, A. Soltani, M. A. Djouadi

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1604-1608. ⟨10.1002/pssa.200983776⟩. ⟨hal-00549911⟩

  • Communication dans un congrès

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

S. Bouzid, Virginie Hoel, N. Defrance, H. Maher, F. Lecourt, M. Renvoise, D. Smith, Jean-Claude de Jaeger

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩. ⟨hal-00549981⟩

  • Communication dans un congrès

An UWB millimeter-wave transceiver architecture for wireless sensor networks applications

L. Jin, Christophe Loyez, N. Rolland, P.A. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.377-380. ⟨hal-00549932⟩

  • Communication dans un congrès

Baseband Fading Channel Simulator for Inter-Vehicle Communication using SystemC-AMS

Abdelbasset Massouri, Antoine Lévêque, Laurent Clavier, Michel Vasilevski, Andreas Kaiser, Marie-Minerve Louerat

System level modeling and simulation have become a key issue in analyzing, optimizing and designing wireless systems. In this paper, modeling RF front end devices and radio propaga- tion channel especially fading time-variant channel for Inter- Vehicle Communication using SystemC-AMS are...

2010 IEEE International Behavioral Modeling and Simulation Conference (BMAS 2010), Sep 2010, San Jose, CA, United States. pp.36-41. ⟨hal-00632156⟩

  • Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Nina Diakonova, A. El Fatimy, Y. Meziani, T. Otsuji, Dominique Coquillat, Wojciech Knap, Frederic Teppe, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M. A. Poisson, S. Delage

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1. ⟨hal-00636136⟩

  • Communication dans un congrès

SubfemtoFarad MOS varactor characterization tools

R. Debroucke, J. Larchanche, D. Theron, D. Ducatteau, H. Tanbakuchi, Christophe Gaquière

40th European Microwave Conference, EuMC 2010, 2010, France. pp.783-786. ⟨hal-00550021⟩

  • Communication dans un congrès

Asymptotic performance of LDPC codes in impulsive non-gaussian channel

H. Ben Maad, Alban Goupil, Laurent Clavier, G. Gelle

11th IEEE International Workshop on Signal Processing Advances in Wireless Communications, SPAWC 2010, 2010, Marrakech, Morocco. pp.1-5, ⟨10.1109/SPAWC.2010.5670974⟩. ⟨hal-00568585⟩

  • Communication dans un congrès

Characterisation by time-frequency analysis of the EM disturbances produced by railway substations

T. Hammi, S. Baranowski, H. Ouaddi, G. Nottet, V. Deniau, J. Rioult

9th International Symposium on EMC joint with 20th International Wroclaw Symposium on EMC, EMC Europe 2010, 2010, Poland. pp.826-831. ⟨hal-00568651⟩