Publicaciones

Affichage de 10161 à 10170 sur 16256


  • Article dans une revue

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

H.A. Nilsson, P. Caroff, C. Thelander, E. Lind, O. Karlström, L.E. Wernersson

Applied Physics Letters, 2010, 96, pp.153505-1-3. ⟨10.1063/1.3402760⟩. ⟨hal-00548729⟩

  • Proceedings/Recueil des communications

Galileo Galilei. Notes on Trattato di Fortificazione

Raffaele Pisano, Danilo Capecchi

Proceedings of Galileo and the renaissance scientific discourse, Edizioni Nuova Cultura, pp.28-41, 2010, 978-88-6134-491-4. ⟨hal-04513904⟩

  • Communication dans un congrès

Monocouches organiques auto-assemblées pour application en transistors à effet de champ et switch électrooptique

D. Lmimouni, Marc Ternisien, S. Lenfant, David Guérin, Dominique Vuillaume

PIRM IV : 4e Congrès International Physique des Interactions Rayonnement Matière, Dakhla, MOROCCO, 2010, Dakhla, Maroc. ⟨hal-03954183⟩

  • Chapitre d'ouvrage

BAW-IC co-integration tunable filters at GHz frequencies

A. Cathelin, S. Razafimandimby, A. Kaiser

A.H.M. van Roermund, M. Steyaert, H. Casier. Analog circuit design : smart data converters, filters on chip, multimode transmitters, Springer-Verlag, pp.207-232, 2010. ⟨hal-00575846⟩

  • Chapitre d'ouvrage

Microtechnologies and micromanipulation

L. Buchaillot

Chaillet N., Régnier S. Microrobotics for micromanipulation, Wiley-ISTE, pp.335-368, 2010. ⟨hal-00575862⟩

  • Communication dans un congrès

MEMS-based multisensors platform with piezoelectric actuation and piezoresistive read-out capabilities for biosensing applications

Thomas Alava, Fabrice Mathieu, Denis Remiens, Caroline Soyer, Liviu Nicu

Biosensors 2010, 2010, Glasgow, United Kingdom. ⟨hal-00574487⟩

  • Article dans une revue

On Principles In Sadi Carnot’s Thermodynamics (1824). Epistemological Reflections

Raffaele Pisano

Almagest, 2010, 1 (2), pp.128-179. ⟨10.1484/J.ALMA.3.16⟩. ⟨hal-04507955⟩

  • Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT...

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩