Publicaciones

• Communication dans un congrès

THz plasmonic waves launchers for metamaterials studies

Tahsin Akalin, Willie J. Padilla

3rd Annual Winter Topical Meeting of the IEEE Photonics Society, WIN2010, Jan 2010, Majorca, Spain. pp.36-37. ⟨hal-00549951⟩

• Communication dans un congrès

Injection-locking of terahertz quantum cascade lasers up to 35GHz via RF amplitude modulation

P. Gellie, S. Barbieri, Jean-Francois Lampin, P. Filloux, C. Manquest, C. Sirtori, I. Sagnes, S.P. Khanna, E.H. Linfield, H.E. Beere, D.A. Ritchie

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612807⟩. ⟨hal-00549949⟩

• Communication dans un congrès

Influence of temperature on high frequency performance of graphene nano ribbon field effect

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

68th Device Research Conference, DRC 2010, 2010, United States. pp.69-70, ⟨10.1109/DRC.2010.5551934⟩. ⟨hal-00549925⟩

• Proceedings/Recueil des communications

Il ruolo della meccanica ne Le Fortificazioni di Buonaiuto Lorini (The role of mechanics in Buonaiuto Lorini's Fortifications)

Raffaele Pisano, Danilo Capecchi

Proceedings of the 3rd History of Engineering Conference, I, Cuzzolin, pp.797-808, 2010, 978-88-87479-11-9. ⟨hal-04514508⟩

• Article dans une revue

Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires

Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch

We discuss the binding energy Eb of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of Eb from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (16), pp.161301(R). ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩

• Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

OPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩. ⟨hal-02443155⟩

• Article dans une revue

Effect of on band alignment of compressively strained Ga1-xInxNyAs1-y-zSbz/GaAs quantum well structures

A. Aissat, S. Nacer, M. Seghilani, Jean-Pierre Vilcot

Physica E: Low-dimensional Systems and Nanostructures, 2010, 43, pp.40-44. ⟨10.1016/j.physe.2010.06.016⟩. ⟨hal-00552029⟩

• Communication dans un congrès

A localization technique for LOS and NLOS scenario

P. Stefanut, D.P. Gaillot, A. Nasr, M. Lienard, Pierre Degauque

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.121-124. ⟨hal-00550033⟩

• Communication dans un congrès

Output power density higher than 1W/mm at 4GHz thanks to an original silicon LDEMOS transistor layout

D. Ducatteau, D. Fournier, G. Bekangba, P. Chevalier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.150-153. ⟨hal-00550007⟩

• Communication dans un congrès

From conventional SMH techniques towards passive SHM system

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad, Malika Toubal, Sébastien Grondel

1st Mediterranean Congress on Acoustics, MCA 2010, 2010, Salé, Morocco. ⟨hal-00808305⟩