Publicaciones

• Communication dans un congrès

TOSCANE : TOwards SCalable Audiovisual Communication Networks

O. Salem, L. Carminati, A. Senoussaoui, E. Renan, A.S. Bacquet, Patrick Corlay, François-Xavier Coudoux, Christophe Deknudt, Marc G. Gazalet, Mohamed Gharbi, Marie Zwingelstein, M. Guarisco, H. Rabah, Y. Berviller, Sébastien J. Weber

IEEE Global Information Infrastructure Symposium, GIIS 2009, 2009, Tunisia. pp.1-6, ⟨10.1109/GIIS.2009.5307043⟩. ⟨hal-00474153⟩

• Article dans une revue

Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator

T. Sadi, Jean-Luc Thobel

We report results from the investigation of the intrinsic high-frequency (HF) behavior of three-terminal junctions based on InGaAs∕InAlAs heterostructures, using a well-calibrated three-dimensional semiclassical ensemble Monte Carlo simulation model. The simulator incorporates a more realistic...

Journal of Applied Physics, 2009, 106 (8), pp.083709. ⟨10.1063/1.3248358⟩. ⟨hal-00473654⟩

• Article dans une revue

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

I. Saidi, M. Gassoumi, H. Maaref, H. Mejri, Christophe Gaquière

Journal of Applied Physics, 2009, 106, pp.054511-1-7. ⟨10.1063/1.3202317⟩. ⟨hal-00473632⟩

• Article dans une revue

Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki, D. Delille, C. Maurice, David Troadec

This paper presents the synthesis of epitaxial silicon (Si) nanoblades of controlled dimensions (thickness 50nm, width 200nm to 2μm) obtained by catalytic growth in a tunnel of confinement. The fabrication of horizontal cavities containing the catalyst slug is first described to show how the tunnel...

IOP Conference Series: Materials Science and Engineering, 2009, Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting) 8–12 June 2009, Strasbourg, France, 6, pp.012022. ⟨10.1088/1757-899X/6/1/012022⟩. ⟨hal-00471991⟩

• Article dans une revue

Size-dependent optical properties of colloidal PbS quantum dots

Iwan Moreels, Karel Lambert, Dries Smeets, David de Muynck, Tom Nollet, José C Martins, Frank Vanhaecke, Andre Vantomme, Christophe Delerue, Guy Allan, Zeger Hens

We quantitatively investigate the size-dependent optical properties of colloidal PbS nanocrystals or quantum dots (Qdots), by combining the Qdot absorbance spectra with detailed elemental analysis of the Qdot suspensions. At high energies, the molar extinction coefficient ε increases with the Qdot...

ACS Nano, 2009, 3, pp.3023-3030. ⟨10.1021/nn900863a⟩. ⟨hal-00473363⟩

• Communication dans un congrès

Field-induced vortices in weakly anisotropic ferroelectrics

A. Sené, Igor A. Luk'Yanchuk, L. Baudry, L. Lahoche

21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009, 2009, Colorado Springs, CO, United States. ⟨hal-00575712⟩

• Communication dans un congrès

Caractérisation de défauts atomiques uniques dans un semiconducteur

B. Grandidier

Journées Nanomicrotechnologies : Surfaces et nanostructures - Analyses, mesures et modélisations, 2009, Paris, France. ⟨hal-00575341⟩

• Communication dans un congrès

Caractérisation électrique de défauts ponctuels atomiques uniques dans un semi-conducteur

B. Grandidier

Journées Nanomicrotechnologies, 2009, Paris, France. ⟨hal-00575347⟩

• Communication dans un congrès

BAW-IC co-integration tunable filters at GHz frequencies

A. Cathelin, S. Razafimandimby, A. Kaiser

18th Workshop on Advances in Analog Circuit Design, AACD 2009, 2009, Lund, Sweden. ⟨hal-00575270⟩

• Communication dans un congrès

Kelvin force microscopy for n- and p-type GaN surface characterization

Thierry Melin, Koku Kusiaku, Sophie Barbet, D. Deresmes, Didier Theron, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson, Jean-Claude Jacquet

Worskhop on Compound Semiconductor Materials and Devices, WOCSEMMAD'09, 2009, Fort Myers, FL, United States. ⟨hal-00575345⟩