Publicaciones

• Article dans une revue

12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

S. Vandenbrouck, K. Madjour, D. Theron, Y.J. Dong, Y. Li, C.M. Lieber, Christophe Gaquière

IEEE Electron Device Letters, 2009, 30, pp.322-324. ⟨10.1109/LED.2009.2014791⟩. ⟨hal-00473429⟩

• Article dans une revue

Coupled analysis of high and low frequency resonant ultrasound spectroscopy : application to the detection of defects in ceramic balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Mohamed Ourak, S. Desvaux

Review of Scientific Instruments, 2009, 80, pp.054903-1-6. ⟨10.1063/1.3142462⟩. ⟨hal-00473705⟩

• Article dans une revue

Electron transport properties of gallium nitride for microscopic power device modelling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good...

Journal of Physics: Conference Series, 2009, 193, pp.012005-1-4. ⟨10.1088/1742-6596/193/1/012005⟩. ⟨hal-00473639⟩

• Article dans une revue

Applicability of acoustic noise correlation for structural health monitoring in nondiffuse field conditions

Emmanuel Moulin, Najib Abou Leyla, Jamal Assaad, Sébastien Grondel

Ambient noise correlation offers an elegant way of passively caracterize a medium. The principle is that in diffuse field condition, Green’s function between two sensors can be retrieved from the cross-correlated received signals. Here, the technique is applied in conditions where convergence...

Applied Physics Letters, 2009, 95, pp.094104-1-3. ⟨10.1063/1.3200240⟩. ⟨hal-00473707⟩

• Article dans une revue

Contactless microwave technique based on a spread-loss model for dielectric materials characterization

Kamel Haddadi, M.M. Wang, O. Benzaim, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.33-35. ⟨10.1109/LMWC.2008.2008573⟩. ⟨hal-00472450⟩

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩

• Article dans une revue

Ultracompact optical filter based on a stub resonator in GaInAsP/InP optical wire technology

Sophie Maricot, Marie Lesecq, Jean-Pierre Vilcot, Christiane Legrand, Marc François, Maxime Beaugeois

Optics Letters, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩. ⟨hal-00473045⟩

• Communication dans un congrès

Millimeter wave ultra wide band short range radar localization accuracy

N. Obeid, M. Heddebaut, Fouzia Boukour, Christophe Loyez, N. Rolland

IEEE 69th Vehicular Technology Conference, VTC Spring 2009, 2009, Spain. pp.2170-2174, ⟨10.1109/VETECS.2009.5073669⟩. ⟨hal-00474172⟩

• Communication dans un congrès

Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Alexandre Beck, Olivier Offranc, Mohammed Zaknoune, Emilien Peytavit, Guillaume Ducournau, Tahsin Akalin, X. Wallart, Jean-Francois Lampin

We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5324658⟩. ⟨hal-00474427⟩

• Article dans une revue

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩