Publicaciones

• Communication dans un congrès

Characterization of evanescent ultrasonic waves in a band gap of a 1D phononic crystal

M. Bavencoffe, B. Morvan, J.L. Izbicki, Anne-Christine Hladky

IEEE International Ultrasonics Symposium, 2009 IEEE IUS, 2009, Italy. pp.1024-1027, ⟨10.1109/ULTSYM.2009.5441893⟩. ⟨hal-00474072⟩

• Communication dans un congrès

Electrode sizing for guided wave resonator above a Bragg mirror

I. Kone, A. Reinhardt, F. Domingue, Bertrand Dubus, L. Buchaillot, F. Casset, J.F. Carpentier, M. Aid

63rd IEEE International Frequency Control Symposium, joint with 23rd European Frequency and Time Forum, EFTF-IFCS 2009, 2009, France. pp.904-907, ⟨10.1109/FREQ.2009.5168318⟩. ⟨hal-00474071⟩

• Article dans une revue

Applicability of acoustic noise correlation for structural health monitoring in nondiffuse field conditions

Emmanuel Moulin, Najib Abou Leyla, Jamal Assaad, Sébastien Grondel

Ambient noise correlation offers an elegant way of passively caracterize a medium. The principle is that in diffuse field condition, Green’s function between two sensors can be retrieved from the cross-correlated received signals. Here, the technique is applied in conditions where convergence...

Applied Physics Letters, 2009, 95, pp.094104-1-3. ⟨10.1063/1.3200240⟩. ⟨hal-00473707⟩

• Article dans une revue

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• Article dans une revue

Extension of the "equivalent cable bundle method" for modeling electromagnetic emissions of complex cable bundles

Guillaume Andrieu, Alain Reineix, X. Bunlon, J.P. Parmantier, L. Kone, B. Demoulin

IEEE Transactions on Electromagnetic Compatibility, 2009, 51, pp.108-118. ⟨10.1109/TEMC.2008.2007803⟩. ⟨hal-00473686⟩

• Article dans une revue

Electron transport properties of gallium nitride for microscopic power device modelling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good...

Journal of Physics: Conference Series, 2009, 193, pp.012005-1-4. ⟨10.1088/1742-6596/193/1/012005⟩. ⟨hal-00473639⟩

• Article dans une revue

12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

S. Vandenbrouck, K. Madjour, D. Theron, Y.J. Dong, Y. Li, C.M. Lieber, Christophe Gaquière

IEEE Electron Device Letters, 2009, 30, pp.322-324. ⟨10.1109/LED.2009.2014791⟩. ⟨hal-00473429⟩

• Article dans une revue

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

T. Sadi, F. Dessenne, Jean-Luc Thobel

We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and...

Journal of Applied Physics, 2009, 105 (5), pp.0537075. ⟨10.1063/1.3087703⟩. ⟨hal-00473651⟩

• Article dans une revue

Defect modes in one-dimensional anisotropic photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

We theoretically analyze the defect states in a single-defect photonic crystal composed of anisotropic dielectric materials. This structure can trap light of a given frequency range and filter only a certain frequency light. It is shown that the defect modes appear as peaks in the transmission...

Journal of Applied Physics, 2009, 106 (11), pp.113107. ⟨10.1063/1.3266005⟩. ⟨hal-00473077⟩

• Article dans une revue

Electrons in quantum dots : one by one

S. Gustavsson, R. Leturcq, T. Ihn, K. Ensslin, A.C. Gossard

A quantum point contact placed close to a quantum dot can be used as a charge detector with time resolution to monitor the charge flow on the level of individual electrons. The current through the quantum point contact may take two possible values corresponding to the situation of an additional...

Journal of Applied Physics, 2009, 105 (12), pp.122401. ⟨10.1063/1.3116227⟩. ⟨hal-00473401⟩