Publicaciones

• Article dans une revue

12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

S. Vandenbrouck, K. Madjour, D. Theron, Y.J. Dong, Y. Li, C.M. Lieber, Christophe Gaquière

IEEE Electron Device Letters, 2009, 30, pp.322-324. ⟨10.1109/LED.2009.2014791⟩. ⟨hal-00473429⟩

• Article dans une revue

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

T. Sadi, F. Dessenne, Jean-Luc Thobel

We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and...

Journal of Applied Physics, 2009, 105 (5), pp.0537075. ⟨10.1063/1.3087703⟩. ⟨hal-00473651⟩

• Article dans une revue

Defect modes in one-dimensional anisotropic photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

We theoretically analyze the defect states in a single-defect photonic crystal composed of anisotropic dielectric materials. This structure can trap light of a given frequency range and filter only a certain frequency light. It is shown that the defect modes appear as peaks in the transmission...

Journal of Applied Physics, 2009, 106 (11), pp.113107. ⟨10.1063/1.3266005⟩. ⟨hal-00473077⟩

• Article dans une revue

Electrons in quantum dots : one by one

S. Gustavsson, R. Leturcq, T. Ihn, K. Ensslin, A.C. Gossard

A quantum point contact placed close to a quantum dot can be used as a charge detector with time resolution to monitor the charge flow on the level of individual electrons. The current through the quantum point contact may take two possible values corresponding to the situation of an additional...

Journal of Applied Physics, 2009, 105 (12), pp.122401. ⟨10.1063/1.3116227⟩. ⟨hal-00473401⟩

• Article dans une revue

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev

Journal of Applied Physics, 2009, 105, pp.073703-1-6. ⟨10.1063/1.3100206⟩. ⟨hal-00472679⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning...

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• Article dans une revue

Phononic crystals and manipulation of sound

Yan Pennec, Bahram Djafari-Rouhani, H. Larabi, Jerome O. Vasseur, Anne-Christine Hladky

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2080-2085. ⟨10.1002/pssc.200881760⟩. ⟨hal-00473419⟩

• Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩

• Article dans une revue

InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn

IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

• Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩