Publicaciones
Affichage de 10931 à 10940 sur 16278
Multi-service applications on high modal bandwidth glass multimode fiber
C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, P.A. Rolland
Electronics Letters, 2009, 45, pp.951-952. ⟨10.1049/el.2009.1584⟩. ⟨hal-00471848⟩
Gate-recess technology for InAs/AlSb HEMTs
E. Lefebvre, M. Malmkvist, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn
IEEE Transactions on Electron Devices, 2009, 56, pp.1904-1911. ⟨10.1109/TED.2009.2026123⟩. ⟨hal-00471908⟩
Improved characterization methology for MOSFETs up to 220 GHz
N. Waldhoff, C. Andrei, D. Gloria, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine
IEEE Transactions on Microwave Theory and Techniques, 2009, 57, pp.1237-1243. ⟨10.1109/TMTT.2009.2017359⟩. ⟨hal-00471808⟩
Novel bondpad report process for III-V semiconductor devices using full HSQ properties
Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster
Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩
Recent progress in high-speed silicon-based optical modulators [Invited paper]
D. Marris-Morini, L. Vivien, G. Rasigade, J.M. Fedeli, E. Cassan, Xavier Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, Mathieu Halbwax, S. Laval
Proceedings of the IEEE, 2009, 97, pp.1199-1215. ⟨10.1109/JPROC.2009.2015337⟩. ⟨hal-00473046⟩
Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors
C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume
Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩
Al and Ti/Al contacts on n-GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩
Nanoscale plasmon waveguide including cavity resonator
A. Noual, Yan Pennec, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski
Journal of Physics: Condensed Matter, 2009, 21, pp.375301-1-6. ⟨10.1088/0953-8984/21/37/375301⟩. ⟨hal-00473342⟩
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
V.G. Dubrovskii, N.V. Sibirev, G.E. Cirlin, I.P. Soshnikov, W.H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, M. Moewe, L.C. Chuang, C. Chang-Hasnain
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.205316-1-7. ⟨10.1103/PhysRevB.79.205316⟩. ⟨hal-00473095⟩
Towards silicon-nanowire-structured materials by the intimate mixing of patterning the solid state and chemical reactions
D. Hourlier, Bernard Legrand, Christophe Boyaval, P. Perrot
Journal of Nano Research, 2009, 6, pp.215-224. ⟨10.4028/www.scientific.net/JNanoR.6.215⟩. ⟨hal-00471951⟩