Publicaciones

• Article dans une revue

High-frequency noise performance of 60-nm gate-length FinFETs

J.P. Raskin, G. Pailloncy, D. Lederer, Francois Danneville, Gilles Dambrine, S. Decoutere, A. Mercha, B. Parvais

IEEE Transactions on Electron Devices, 2008, 55, pp.2718-2727. ⟨10.1109/TED.2008.2003097⟩. ⟨hal-00356670⟩

• Article dans une revue

Ballistic nanodevices for high frequency applications

C. Gardes, Yannick Roelens, S. Bollaert, J.S. Galloo, X. Wallart, A. Curutchet, Christophe Gaquière, J. Mateos, T. Gonzalez, B.G. Vasallo, L. Bednarz, I. Huynen

International Journal of Nanotechnology, 2008, 5, 796-808, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018698⟩. ⟨hal-00356665⟩

• Article dans une revue

Sonic band gaps in one-dimensional phononic crystals with a symmetric stub

Anne-Christine Hladky, Jerome O. Vasseur, Bahram Djafari-Rouhani, M. de Billy

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.104304-1-7. ⟨10.1103/PhysRevB.77.104304⟩. ⟨hal-00356646⟩

• Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF...

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩

• Article dans une revue

Scanning tunneling spectroscopy of individual PbSe quantum dots and molecular aggregates stabilized in an inert nanocrystal matrix

K. Overgaag, P. Liljeroth, B. Grandidier, D. Vanmaekelbergh

ACS Nano, 2008, 2, pp.600-606. ⟨10.1021/nn7003876⟩. ⟨hal-00357383⟩

• Communication dans un congrès

InAlN/GaN MOSHEMT with thermally grown oxide

M. Alomari, F Medjdoub, J.F. Carlin, N. Grandjean, Christophe Gaquière, M.A. Poisson, S. Delage, E. Kohn

Lester Eastman Conference on High Performance Devices, 2008, Newark, DE, United States. ⟨hal-00362034⟩

• Communication dans un congrès

Towards high performance E-mode InAlN/GaN HEMTs

F Medjdoub, M. Alomari, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008, 2008, Belgium. pp.97-98. ⟨hal-00361120⟩

• Article dans une revue

Nanoscale investigations of switching properties and piezoelectric activity in ferroelectric thin films using piezoresponse force microscopy

Rachel Desfeux, Anthony Ferri, Céline Legrand, Luc Maes, Antonio Da Costa, G. Poullain, R. Bouregba, Caroline Soyer, Denis Remiens

International Journal of Nanotechnology, 2008, 5, 827-837, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018701⟩. ⟨hal-00360329⟩

• Article dans une revue

Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

C. Petit, D. Zander, K. Lmimouni, M. Ternisien, D. Tondelier, S. Lenfant, D. Vuillaume

Organic Electronics, 2008, 9, pp.979-984. ⟨10.1016/j.orgel.2008.07.013⟩. ⟨hal-00357293⟩

• Article dans une revue

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart

Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩. ⟨hal-00357273⟩