Publicaciones

Affichage de 11141 à 11150 sur 16278


  • Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

  • Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

  • Article dans une revue

Light polarized resonant Raman spectra from individual single- and double-wall carbon nanotubes

Jaroslaw Judek, David Brunel, Thierry Melin, Marcin Marczak, Mariusz Zdrojek, Wojciech Gȩbicki, Leszek Adamowicz

Measured light polarization dependent resonant Raman spectra from spatially isolated semiconducting single- and double-wall carbon nanotubes are reported. Most of the observed modes intensities exhibit two or fourfold symmetry, for VV and VH configuration, respectively. Weak quantitative changes in...

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2056-2059. ⟨10.1002/pssc.200881757⟩. ⟨hal-00473404⟩

  • Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

  • Communication dans un congrès

An organic-nanoparticle transistor behaving as a spiking synapse

F. Alibart, Christophe Novembre, David Guérin, Stéphane Pleutin, K. Lmimouni, Christian Gamrat, Dominique Vuillaume

4th International Meeting on Molecular Electronics, ElecMol'08, Dec 2008, Grenoble, France. ⟨hal-00361614⟩

  • Article dans une revue

Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. van Aken, N. Breil, G. Larrieu, Emmanuel Dubois

The mechanisms of the platinum germanide formation by RTA processes in the Ge/Pt/Ge/SiO2/Si structure in the temperature range from 200 °C to 600 °C were investigated by means of transmission electron microscopy (TEM) techniques. The studies were focused on the observations of the layer...

Materials Science and Engineering: B, 2008, 154-155, pp.175-178. ⟨10.1016/j.mseb.2008.10.002⟩. ⟨hal-00356977⟩