Publicaciones
Affichage de 11181 à 11190 sur 16064
Kelvin force microscopy at the second cantilever resonance : an out-of-vacuum crosstalk compensation setup
H. Diesinger, D. Deresmes, J.P. Nys, Thierry Melin
Ultramicroscopy, 2008, 108, pp.773-781. ⟨hal-00357370⟩
Scanning tunnelling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures
A. Urbieta, B. Grandidier, J.P. Nys, D. Deresmes, D. Stievenard, A. Lemaitre, G. Patriarche, Y.M. Niquet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.155313-1-6. ⟨10.1103/PhysRevB.77.155313⟩. ⟨hal-00357382⟩
Low-loss left-handed metamaterials at millimeter waves
F. Zhang, D.P. Gaillot, Charles Croënne, Eric Lheurette, X. Melique, D. Lippens
Applied Physics Letters, 2008, 93, pp.083104-1-3. ⟨10.1063/1.2975187⟩. ⟨hal-00356926⟩
Special Issue. Qual è il ruolo culturale ed interdisciplinare delle scienze fisiche e matematiche ? Ipotesi e prospettive (Introduction to What is the cultural and interdisciplinary role of the physical and mathematical sciences? Hypotheses and perspectives)
Raffaele Pisano
Rivista di Epistemologia Didattica, III (5-6), 2008, What is the cultural and interdisciplinary role of the physical and mathematical sciences? Hypotheses and perspectives). ⟨hal-04514456⟩
UWB in millimeter wave band with pulsed ILO
N. Deparis, Christophe Loyez, N. Rolland, P.A. Rolland
IEEE Transactions on Circuits and Systems I: Regular Papers, 2008, 55, pp.339-343. ⟨10.1109/TCSII.2008.918977⟩. ⟨hal-00356911⟩
Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography
T. Xu, J.P. Nys, B. Grandidier, D. Stievenard, Yannick Coffinier, Rabah Boukherroub, R. Larde, E. Cadel, P. Pareige
Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩. ⟨hal-00357357⟩
InP/benzocyclobutene optical nanowires
Michèle Carette, Jean-Pierre Vilcot, D. Bernard, Didier Decoster
Electronics Letters, 2008, 44, pp.902-903. ⟨10.1049/el:20081169⟩. ⟨hal-00357307⟩
High-frequency noise performance of 60-nm gate-length FinFETs
J.P. Raskin, G. Pailloncy, D. Lederer, Francois Danneville, Gilles Dambrine, S. Decoutere, A. Mercha, B. Parvais
IEEE Transactions on Electron Devices, 2008, 55, pp.2718-2727. ⟨10.1109/TED.2008.2003097⟩. ⟨hal-00356670⟩
Ballistic nanodevices for high frequency applications
C. Gardes, Yannick Roelens, S. Bollaert, J.S. Galloo, X. Wallart, A. Curutchet, Christophe Gaquière, J. Mateos, T. Gonzalez, B.G. Vasallo, L. Bednarz, I. Huynen
International Journal of Nanotechnology, 2008, 5, 796-808, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018698⟩. ⟨hal-00356665⟩
Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation
A.S. Roy, C.C. Enz, T.C. Lim, Francois Danneville
IEEE Transactions on Electron Devices, 2008, 55, pp.2268-2272. ⟨10.1109/TED.2008.925935⟩. ⟨hal-00356669⟩