Publicaciones

• Article dans une revue

Estimation of dynamic parameters of overthreshold parametric phase conjugation of ultrasound in magnetostrictive ferrites according to data of quasi-static measurements

Andrey Brysev, Philippe Pernod, Vladimir L. Preobrazhensky

A simple method for testing ferrite samples intended to be active elements of parametric phase conjugator of ultrasound was proposed and experimentally approved. The method allows one to estimate such dynamic parameters of parametric phase conjugator of ultrasound as the parametric amplification...

Physics of Wave Phenomena, 2008, 16, pp.80-85. ⟨10.3103/S1541308X08020027⟩. ⟨hal-00800675⟩

• Communication dans un congrès

Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩. ⟨hal-00800960⟩

• Article dans une revue

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩

• Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• Article dans une revue

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Alexandre Beck, Guillaume Ducournau, Mohammed Zaknoune, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Francis Mollot, Francis Hindle, Chun Yang, Gaël Mouret

The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 µW at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high...

Electronics Letters, 2008, 44, pp.1320-1322. ⟨10.1049/el:20082219⟩. ⟨hal-00356950⟩

• Article dans une revue

Integrated 3D silicon electrodes for electrochemical sensing in microfluidic environments : application to single cell characterization

V. Senez, E. Lennon, S. Ostrovidov, T. Yamamoto, H. Fujita, Y. Sakai, T. Fujii

IEEE Sensors Journal, 2008, 8, pp.548-557. ⟨10.1109/JSEN.2008.918948⟩. ⟨hal-00356897⟩

• Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩

• Article dans une revue

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩