Publicaciones

Affichage de 11341 à 11350 sur 16064


  • Article dans une revue

Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation

A.S. Roy, C.C. Enz, T.C. Lim, Francois Danneville

IEEE Transactions on Electron Devices, 2008, 55, pp.2268-2272. ⟨10.1109/TED.2008.925935⟩. ⟨hal-00356669⟩

  • Article dans une revue

Sonic band gaps in one-dimensional phononic crystals with a symmetric stub

Anne-Christine Hladky, Jerome O. Vasseur, Bahram Djafari-Rouhani, M. de Billy

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.104304-1-7. ⟨10.1103/PhysRevB.77.104304⟩. ⟨hal-00356646⟩

  • Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF...

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩

  • Article dans une revue

Scanning tunneling spectroscopy of individual PbSe quantum dots and molecular aggregates stabilized in an inert nanocrystal matrix

K. Overgaag, P. Liljeroth, B. Grandidier, D. Vanmaekelbergh

ACS Nano, 2008, 2, pp.600-606. ⟨10.1021/nn7003876⟩. ⟨hal-00357383⟩

  • Communication dans un congrès

InAlN/GaN MOSHEMT with thermally grown oxide

M. Alomari, F Medjdoub, J.F. Carlin, N. Grandjean, Christophe Gaquière, M.A. Poisson, S. Delage, E. Kohn

Lester Eastman Conference on High Performance Devices, 2008, Newark, DE, United States. ⟨hal-00362034⟩

  • Communication dans un congrès

Towards high performance E-mode InAlN/GaN HEMTs

F Medjdoub, M. Alomari, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008, 2008, Belgium. pp.97-98. ⟨hal-00361120⟩

  • Article dans une revue

Elastic properties of finite three-dimensional solid phononic-crystal slabs

R. Sainidou, Bahram Djafari-Rouhani, Jerome O. Vasseur

Photonics and Nanostructures - Fundamentals and Applications, 2008, 6, pp.122-126. ⟨10.1016/j.photonics.2007.10.001⟩. ⟨hal-00357785⟩

  • Article dans une revue

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

M. Gassoumi, J.M. Bluet, G. Guillot, Christophe Gaquière, H. Maaref

Materials Science and Engineering: C, 2008, 28, pp.787-790. ⟨10.1016/j.msec.2007.10.068⟩. ⟨hal-00357801⟩

  • Article dans une revue

Location and communication using cooperative radar system dedicated to guided transports

Yassin El Hillali, C. Tatkeu, Atika Rivenq, Jean-Michel Rouvaen, J.P. Ghys

Transportation research. Part C, Emerging technologies, 2008, 16, pp.141-152. ⟨10.1016/j.trc.2007.07.008⟩. ⟨hal-00356903⟩