Publicaciones

• Communication dans un congrès

[Invité] Caractérisation électrique de défauts atomiques uniques dans un semi-conducteur

B. Grandidier

Journées Nationales en Nanosciences et Nanotechnologies, J3N 2008, 2008, Grenoble, France. ⟨hal-00811728⟩

• Communication dans un congrès

Scanning-probe measurements on undoped silicon nanowires

Lukasz Borowik, Heinrich Diesinger, D. Hourlier-Bahloul, Thierry Melin

Forum des Microscopies à Sonde Locale, 2008, La Londe les Maures, France. ⟨hal-00376238⟩

• Article dans une revue

Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)

G. Delhaye, L. Desplanque, X. Wallart

Journal of Applied Physics, 2008, 104 (6), pp.066105. ⟨10.1063/1.2978365⟩. ⟨hal-00356944⟩

• Article dans une revue

Unified and stable scattering matrix formalism for acoustic waves in piezoelectric stacks

Victor Y. Zhang, Vincent Laude

This paper presents a unified and full scattering matrix (s-matrix) formalism for modeling of acoustic waves in piezoelectric multilayered structures. A stable recursive algorithm is derived for computation of the total s-matrix of a stack in terms of the interface s-matrix, both referring to the...

Journal of Applied Physics, 2008, 104, pp.064916-1-7. ⟨10.1063/1.2978219⟩. ⟨hal-00360352⟩

• Article dans une revue

Legendre polynomial modeling of composite bulk acoustic wave resonators

A. Raherison, F.E. Ratolojanahary, Jean-Etienne Lefebvre, L. Elmaimouni

The Legendre polynomial method has been extended to the modeling of bulk acoustic wave (BAW) resonators. Modifications have been made to the formulation in order to account for large differences in the physical properties of adjoining layers and to take into account the electric source. A unique...

Journal of Applied Physics, 2008, 104 (1), pp.014508. ⟨10.1063/1.2953096⟩. ⟨hal-00360095⟩

• Article dans une revue

A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, Xing Tang, V. Bayot, Emmanuel Dubois, M.J. Martin

In this paper we present a Monte Carlo investigation of charge transport-including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal...

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS‐15), 5 (1), pp.119-122. ⟨10.1002/pssc.200776519⟩. ⟨hal-04710009⟩

• Communication dans un congrès

Block and convolutional turbo codes In presence of non Gaussian multiple acess interference over Ad Hoc networks

André Goalic, Patrick Adde, Hanza Elghannudi, Laurent Clavier

Sensor networks rely on wireless links between very different communicating objects, more or less sophisti- cated, deployed in various environments, indoor or outdoor, personal or industrial. In this paper we propose a new model for the multiple access interference taking into account the ad hoc...

ISIVC'08 : International Symposium on Image/Video Communications, July 9-11, Bilbao, Spain, Jul 2008, Bilbao, Spain. ⟨hal-00739610⟩

• Article dans une revue

Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani

Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩. ⟨hal-00356993⟩

• Article dans une revue

Electrochemical impedance spectroscopy and surface plasmon resonance studies of DNA hybridization on gold/SiO_<i>x</i> interfaces

Maël Manesse, Valérie Stambouli, Rabah Boukherroub, Sabine Szunerits

The use of Au/SiO_<i>x</i> interfaces for the investigation of DNA hybridization using electrochemical impedance spectroscopy (EIS) and surface plasmon resonance (SPR) simultaneously is demonstrated. Standard glass chemistry was used to link single-stranded DNA (ss...

• Article dans une revue

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Yannick Roelens, Gilles Dambrine, A. Cappy, S. Bollaert, J. Grahn

Solid-State Electronics, 2008, 52, pp.775-781. ⟨10.1016/j.sse.2007.12.002⟩. ⟨hal-00356942⟩