Publicaciones

• Article dans une revue

Preparation of Electrochemical and Surface Plasmon Resonance Active Interfaces: Deposition of Indium Tin Oxide on Silver Thin Films

Sabine Szunerits, Xavier Castel, Rabah Boukherroub

Journal of Physical Chemistry C, 2008, 112, pp.10883-10888. ⟨hal-00402915⟩

• Communication dans un congrès

Charge injection and electrostatics of tailored graphene sheets and ribbons probed by Electric Force Microscope

A. Mahmood, J.F. Dayen, D. Tondelier, Thierry Melin, D. Vuillaume, Erik Dujardin

International Centre for Theoretical Physics Conference, Graphene Week 2008, 2008, Trieste, Italy. ⟨hal-00376233⟩

• Communication dans un congrès

Raman spectroscopy of boron-doped silicon nanowires

M. Marczak, E. Pichonat, W. Gebicki, Thierry Melin, D. Hourlier

European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium J : New Opportunities and Challenges in Material Research using Phonon and Vibrational Spectra, 2008, Warsaw, Poland. ⟨hal-00376240⟩

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Autre publication scientifique

Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS

M. Detalle

2008. ⟨hal-00362347⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the...

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Thermo-opto-mechanical properties of AlN nanostructures : a promising material for NEMS applications

G. Guisbiers, L. Buchaillot

Journal of Physics D: Applied Physics, 2008, 41, pp.172001-1-4. ⟨10.1088/0022-3727/41/17/172001⟩. ⟨hal-00357283⟩

• Communication dans un congrès

Piezoelectric characteristics of metal ferroelectric metal structure on indium tin oxide coated silicon and glass substrate by sputtering

El Hadj Dogheche, L. Kerkache, D. Jenkins, P. Roussel

20th International Symposium on Integrated Ferroelectrics, ISIF 2008, 2008, Singapour, Singapore. ⟨hal-00811724⟩

• Article dans une revue

Study of the fundamental Lamb modes interaction with symmetrical notches

Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin

NDT & E International, 2008, 41, pp.1-9. ⟨10.1016/j.ndteint.2007.07.001⟩. ⟨hal-00360324⟩

• Article dans une revue

Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

M. Detalle, Denis Remiens

Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩