Publicaciones

• Communication dans un congrès

Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication

E. Mairiaux, L. Desplanque, X. Wallart, Gilles Dambrine, M. Zaknoune

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702971⟩. ⟨hal-00360403⟩

• Communication dans un congrès

Elaboration de nanofils de silicium sur pointes de tungstène pour caractérisation en sonde atomique et microscopie champ proche

T. Xu, B. Grandidier, J.P. Nys, D. Stiévenard, E. Cadel, R. Larde, P. Pareige

1ères Journées Nanosciences Nord-Ouest, J2NO 2008, 2008, Poitiers, France. ⟨hal-00361980⟩

• Communication dans un congrès

Ab initio study of a metal contacted organic-inorganic heterostructure

M. Soulis, F. Cleri

European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium G : Morphology and Dynamics of Nanostructures and Disordered Materials via Atomic-scale Modelling, 2008, Warsaw, Poland. ⟨hal-00361976⟩

• Communication dans un congrès

Small signal and noise equivalent circuit for CMOS 65 nm up to 110 GHz

N. Waldhoff, C. Andrei, D. Gloria, Francois Danneville, Gilles Dambrine

38th European Microwave Conference, EuMC 2008, 2008, Netherlands. pp.321-324, ⟨10.1109/EUMC.2008.4751453⟩. ⟨hal-00362371⟩

• Article dans une revue

Time-resolved interference experiments in a solid state environment

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.1044-1047. ⟨10.1016/j.physe.2007.09.209⟩. ⟨hal-00357782⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase...

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩

• Article dans une revue

A comparative study of two non-destructive testing methods to assess near-surface mechanical damage in concrete structures

M. Goueygou, O. Abraham, J.F. Lataste

NDT & E International, 2008, 41, pp.448-456. ⟨10.1016/j.ndteint.2008.03.001⟩. ⟨hal-00356657⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the...

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Ouvrages

Scienze e Religioni. Il ruolo delle scienze naturali, ipotesi di studio e prospettive (Sciences and Religions. The role of natural sciences, study hypotheses and perspectives)

Rafel Pascual, Raffaele Pisano

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction...

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩