Publicaciones

• Communication dans un congrès

Flow induced vibration of a microvalve for aerodynamic control

O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Philippe Pernod, Vladimir Preobrazhensky, A. Merlen

9th International Conference on Flow-Induced Vibrations, FIV2008, 2008, Prague, Czech Republic. pp.1-5. ⟨hal-00800967⟩

• Communication dans un congrès

Detection of salt cavities by high resolution seismic at Art-sur-Meurthe, Lorraine, France

A. Kosecki, Bogdan Piwakowski, L. Driad-Lebeau, P. Safinowski

14th European Meeting of Environmental and Engineering Geophysics, Near Surface 2008, 2008, Krakow, Poland. CDROM, paper P22-1-4. ⟨hal-00800995⟩

• Communication dans un congrès

Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩. ⟨hal-00800960⟩

• Communication dans un congrès

Simulation d'une cavité EM par réduction de circuits électriques couplés formant une super matrice impédance

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

14ème Colloque International sur la Compatibilité Electromagnétique, CEM08, 2008, Paris, France. 1-6, prix du meilleur article scientifique. ⟨hal-00812422⟩

• Communication dans un congrès

Block and convolutional turbo codes over non gaussian multiple access interference ad hoc networks

A. Goalic, Patrick Adde, H. El Ghannudi, Laurent Clavier

4th International Symposium on Image/Video Communications over fixed and mobile networks, ISIVC 2008, 2008, Bilbao, Spain. paper 147, 1-4. ⟨hal-00811199⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction...

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

A. Grüneis, Claudio Attaccalite, L. Wirtz, H. Shiozawa, R. Saito, T. Pichler, A. Rubio

A universal set of third–nearest neighbour tight–binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of N stacked sp2 graphene layers (N = 1 . . . ∞) with AB stacking sequence. The QP bands are strongly renormalized by electron–electron interactions which...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.205425-1-16. ⟨10.1103/PhysRevB.78.205425⟩. ⟨hal-00357778⟩

• Communication dans un congrès

Charge injection and electrostatics of tailored graphene sheets and ribbons probed by Electric Force Microscope

A. Mahmood, J.F. Dayen, D. Tondelier, Thierry Melin, D. Vuillaume, Erik Dujardin

International Centre for Theoretical Physics Conference, Graphene Week 2008, 2008, Trieste, Italy. ⟨hal-00376233⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

J. Afr. Earth Sci, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the...

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩