Publicaciones

• Communication dans un congrès

EWOD displacement on patterned superhydrophobic silicon nanowires surface : lab-on-chip for direct mass spectrometry analysis

F. Lapierre, B. Verbeke, N. Verplanck, V. Thomy, G. Piret, Yannick Coffinier, Rabah Boukherroub

1st European Conference on Microfluidics, MicroFlu'08, 2008, Italy. CDROM, µFLU08-135, 6 p. ⟨hal-00360423⟩

• Article dans une revue

Modelling of the thermal tempering of flat glass : determination of radiative and convective heat transfer enabling prediction and control of residual stresses

Dominique Lochegnies, François Monnoyer de Galland, Mohamed Ourak, N. Siedow, J. Anton, R. Langlais

Glass Technology, European Journal of Glass Science and Technology A, 2008, 49, pp.1-7. ⟨hal-00360326⟩

• Article dans une revue

Extreme resistance of superhydrophobic surfaces to impalement : reversible electrowetting related to the impacting/bouncing drop test

P. Brunet, F. Lapierre, V. Thomy, Yannick Coffinier, Rabah Boukherroub

The paper reports on the comparison of the wetting properties of super-hydrophobic silicon nanowires (NWs), using drop impact impalement and electrowetting (EW) experiments. A correlation between the resistance to impalement on both EW and drop impact is shown. From the results, it is evident that...

Langmuir, 2008, 24 (19), pp.11203-11208. ⟨10.1021/la801268v⟩. ⟨hal-00356899⟩

• Article dans une revue

Blind Channel Equalization Using Constrained Generalized Pattern Search Optimization and Reinitialization Strategy

Abdelouahib Zaouche, Iyad Dayoub, Jean-Michel Rouvaen, Charles Tatkeu

We propose a global convergence baud-spaced blind equalization method in this paper. This method is based on the application of both generalized pattern optimization and channel surfing reinitialization. The potentially used unimodal cost function relies on higher- order statistics, and its...

EURASIP Journal on Advances in Signal Processing, 2008, 2008, pp.765462. ⟨10.1155/2008/765462⟩. ⟨hal-00505953⟩

• Article dans une revue

Modelling of temperature effects on the characteristics of mid-infrared quantum cascade lasers

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2008, 281, pp.5385-5388. ⟨10.1016/j.optcom.2008.07.036⟩. ⟨hal-00360017⟩

• Article dans une revue

Scanning tunnelling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures

A. Urbieta, B. Grandidier, J.P. Nys, D. Deresmes, D. Stievenard, A. Lemaitre, G. Patriarche, Y.M. Niquet

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.155313-1-6. ⟨10.1103/PhysRevB.77.155313⟩. ⟨hal-00357382⟩

• Communication dans un congrès

[Invited] Nonlinear magnetoacoustics of solids

Vladimir Preobrazhensky

Linear and Nonlinear Acoustic Wave Propagation in Heterogeneous Media : Modern Trends and Applications, 2008, Les Houches, France. ⟨hal-00811713⟩

• Communication dans un congrès

Micro ripples, sand ripples and their universal wavelength scaling

P.J. Thomas, Farzam Zoueshtiagh, A. Merlen, V. Thomy

7th EUROMECH Fluid Mechanics Conference, EFMC7, 2008, Manchester, United Kingdom. ⟨hal-00811718⟩

• Communication dans un congrès

THz emission from AlGaN/GaN high mobility transistors

N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, M.E. Levinshtein, S.L. Rumyantsev, M.A. Poisson, S. Delage, Christophe Gaquière, S. Vandenbrouck, A. Cappy

V International Conference 'Basic Problems of Optics', 2008, St Petersburg, Russia. ⟨hal-00811735⟩

• Article dans une revue

Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

Mamadou Diarra, Christophe Delerue, Yann-Michel Niquet, Guy Allan

We present self-consistent tight binding calculations of the electronic structure of donor and acceptor impurities in silicon nanowires surrounded by a gate oxide SiO2 or HfO2 and a metallic gate. These environments efficiently screen the potential of the impurities so that their ionization energy...

Journal of Applied Physics, 2008, 103, pp.073703-1-5. ⟨10.1063/1.2901182⟩. ⟨hal-00357380⟩