Publicaciones

• Communication dans un congrès

Knowledge-Aware Synthesis Using Hierarchical Graph-Based Sizing and Biasing

Ramy Iskander, Marie-Minerve Louërat, Andreas Kaiser, Dimitri Galayko

The hierarchical graph-based sizing and biasing method of analog circuits has been previously developed. Its potential application in the field of knowledge-based analog synthesis is studied. This method reduces the number of optimization variables by taking into account their circuit dependency...

50th Midwest Symposium on Circuits and Systems (MWSCAS), Aug 2007, Montréal, Québec, Canada. pp.984-987, ⟨10.1109/NEWCAS.2007.4487996⟩. ⟨hal-01334852⟩

• Communication dans un congrès

Metamaterials-based Routing Devices for Space Applications

Fuli Zhang, Gregory Houzet, Sylvain Potet, Eric Lheurette, Michel Chaubet, Didier Lippens

2007 International Symposium on Signals, Systems and Electronics, Jul 2007, Montreal, Canada. pp.223-226. ⟨hal-02018041⟩

• Proceedings/Recueil des communications

Low frequency noise in La0.7Sr0.3MnO3 thin films : effects of substrate materials and contact resistance

J.-M. Routoure, L. Méchin, D. Fadil, C. Barone, S. Mercone, P. Perna, S. Flament

AIP, pp.229-232, 2007, ⟨10.1063/1.2759672⟩. ⟨hal-04188817⟩

• Brevet

Circuit de filtrage à transconductance, en particulier pour un téléphone cellulaire

D. Chamla, A. Cathelin, A. Kaiser

N° de brevet: EP1806842 (A1). 2007. ⟨hal-00372347⟩

• Thèse

Co-intégration d'un filtre à ondes de surface avec un amplificateur d'entrée de faible bruit sur Si pour téléphone mobile, Co-integration of surface wave filters with CMOS low noise amplifier in silicon substrate for mobile telephone

Etienne Ntagwirumugara

L’étude présentée dans cette thèse porte sur l'analyse d'un filtre en échelle co-intégré avec un amplificateur faible bruit (LNA) en technologie CMOS dans une gamme de fréquence autour de 945-MHz. L’étude théorique du filtre a été réalisée en utilisant en premier lieu la méthode des modes..., The study presented in this thesis relates to the analysis of a ladder-type filter co-integrated with a CMOS low noise amplifier (LNA) in the frequency band around 945-MHz. The theoretical study of the filter was carried out by using initially the coupling of modes model (COM) but also by applying...

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, UVHC, (France), 2007. Français. ⟨NNT : 2007VALE0025⟩. ⟨hal-00285712⟩

• Brevet

Procédé de contrôle du rapport des facteurs d'amplification de deux amplificateurs linéaires, et dispositif correspondant

D. Chamla, A. Cathelin, A. Kaiser

N° de brevet: FR2895846 (A1). 2007. ⟨hal-00372346⟩

• Article dans une revue

Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M -Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Philippe Vennegues, Zahia Bougrioua, Tobias Guehne

Japanese Journal of Applied Physics, 2007, 46 (7A), pp.4089-4095. ⟨10.1143/JJAP.46.4089⟩. ⟨hal-02906718⟩

• Article dans une revue

A silicon beam-based microcantilever nanoelectrosprayer

S. Arscott, Bernard Legrand, Lionel Buchaillot, Alison Ashcroft

Sensors and Actuators B: Chemical, 2007, 125 (1), pp.72-78. ⟨10.1016/j.snb.2007.01.040⟩. ⟨hal-02347442⟩

• Article dans une revue

Synchronization over rapidly time-varying multipath channel for CDMA downlink RAKE receivers in Time-Division mode

Eric Pierre Simon, Laurent Ros, Kosai Raoof

In this paper, we consider a Time-Division CDMA system operating in downlink mode in a multi-user multipath channel scenario. In order to implement RAKE reception, delays, phases and magnitudes of the different paths need to be estimated and the estimates updated. In the context of burst...

IEEE Transactions on Vehicular Technology, 2007, 56 (4), pp.2216-2225. ⟨10.1109/TVT.2007.904091⟩. ⟨hal-00274990⟩

• Article dans une revue

A 200-GHz true E-mode low-noise MHEMT

Hassan Maher, Ikram El Makoudi, Peter Frijlink, Derek Smith, Marc Rocchi, S. Bollaert, Sylvie Lepilliet, Gilles Dambrine

In this paper, a fully passivated true enhancement mode 110-nm metamorphic high-electron mobility transistor (E-MHEMT) on GaAs substrate with excellent dc and RF performance has been developed. By choosing an indium content of 40% for the AlInAs/GalnAs/AlInAs MHEMT, the difference between the...

IEEE Transactions on Electron Devices, 2007, 54 (7), pp.1626-1632. ⟨10.1109/TED.2007.899377⟩. ⟨hal-00255758⟩