Publicaciones

• Communication dans un congrès

GaN technology for microwave applications

Sylvain Laurent Delage, Marie-Antoinette Di Forte-Poisson, Erwan Morvan, Eric Chartier, M. Laurent, Raphaël Aubry, Serge Bernard, D. Lancereau, Stéphane Piotrowicz, B. Grimbert, Christophe Gaquière, Giles Dambrine, Jean-Claude de Jaeger

GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle. This paper will present the status of current AlGaN/GaN technology

17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008, May 2008, Wroclaw, Poland. pp.1-5. ⟨hal-00800985⟩

• Article dans une revue

Piezoelectric thin films for MEMS applications - A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering

R. Herdier, M. Detalle, D. Jenkins, Caroline Soyer, Denis Remiens

Sensors and Actuators A: Physical , 2008, 148, pp.122-128. ⟨10.1016/j.sna.2008.07.021⟩. ⟨hal-00360331⟩

• Article dans une revue

Studies of some dopants : effect of Mn, Mg, F on (Ba, Sr) PZT films piezoelectric response for specific MEMS applications

T.T. Nguyen, M. Detalle, Denis Remiens, L. Lebrun, D. Guyomar

Integrated Ferroelectrics, 2008, 96, pp.40-50. ⟨10.1080/10584580802074181⟩. ⟨hal-00360333⟩

• Article dans une revue

Interfacial effects on the temperature crystallisation of PMN-PT films deposited on LNO or Pt electrodes

M. Detalle, T.T. Nguyen, G.S. Wang, Denis Remiens

Integrated Ferroelectrics, 2008, 98, pp.171-182. ⟨10.1080/10584580802093520⟩. ⟨hal-00360334⟩

• Article dans une revue

Effective elastic constants in acoustoelasticity

Marc Duquennoy, Mohammadi Ouaftouh, D. Devos, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2008, 92, pp.244105-1-3. ⟨10.1063/1.2945882⟩. ⟨hal-00360092⟩

• Communication dans un congrès

Preliminary investigations on the Te-doped AlInSb/GaInSb heterostructures for High Electron Mobility Transistor (HEMT) applications

L. Delhaye, L. Desplanque, X. Wallart

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702932⟩. ⟨hal-00360480⟩

• Communication dans un congrès

New global blind equalization using two constant modulus asymmetrical modulations proposals

A. Zaouche, Iyad Dayoub, C. Tatkeu, Jean-Michel Rouvaen

67th IEEE Vehicular Technology Conference, VTC Spring 2008, 2008, Singapore. pp.663-667, ⟨10.1109/VETECS.2008.147⟩. ⟨hal-00360432⟩

• Article dans une revue

Etching characteristics and absence of electrical properties damage of PZT thin films etched before crystallization

R.H. Liang, Denis Remiens, Caroline Soyer, N. Sama, X.L. Dong, G.S. Wang

Microelectronic Engineering, 2008, 85, pp.670-674. ⟨10.1016/j.mee.2007.12.031⟩. ⟨hal-00360094⟩

• Article dans une revue

Effects of raised-cosine pulse shaping on processing gain in acousto-optic correlators

O. Bazzi, Y. Mohanna, Fadi Khalil, Jamal Assaad

The effects of raised-cosine filtering on the processing gain of acousto-optic correlators (AOC) in direct-sequence spread-spectrum receivers are considered. For ideal AOCs, analytical expressions are derived for the full roll-off filter characteristics. The results are given in terms of the ratio...

Microwave and Optical Technology Letters, 2008, 50, pp.1558-1561. ⟨10.1002/mop.23431⟩. ⟨hal-00360090⟩

• Article dans une revue

Surface potential of n- and p-type GaN measured by Kelvin force microscopy

Sophie Barbet, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson, Jean-Claude Jacquet, D. Deresmes, Thierry Melin, Didier Theron

Applied Physics Letters, 2008, 93, pp.212107-1-3. ⟨10.1063/1.3028639⟩. ⟨hal-00357781⟩