Publicaciones

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at...

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

Comment on 'Sensitivity of surface states to the stack sequences of one-dimensional photonic crystals

Y. El Hassouani, E.H. El Boudouti, H. Aynaou, Bahram Djafari-Rouhani, V.R. Velasco

Comment on 'Sensitivity of surface states to the stack sequences of one-dimensional photonic crystals'. Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.308-313. ⟨10.1088/1464-4258/9/3/N01⟩. ⟨hal-00283125⟩

• Article dans une revue

Calculation and measurement of the magnetostriction of multilayered composites

L. Garcia-Gancedo, S. Busbridge, Philippe Pernod, Vladimir Preobrazhensky, O. Ducloux

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2627-2629. ⟨10.1016/j.jmmm.2006.11.051⟩. ⟨hal-00285635⟩

• Article dans une revue

On the use of ultrasounds to quantify the longitudinal threshold force to detach osteoblastic cells from a conditioned glass substrate

Dorothée Debavelaere-Callens, L. Peyre, Pierre Campistron, H.F. Hildebrand

Biomolecuar Engineering, 2007, 24, pp.521-525. ⟨10.1016/j.bioeng.2007.08.016⟩. ⟨hal-00285683⟩

• Article dans une revue

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a...

Microelectronics Journal, 2007, 38 (1), pp.7-13. ⟨10.1016/j.mejo.2006.07.025⟩. ⟨hal-00283492⟩

• Article dans une revue

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.E. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn

Electronics Letters, 2007, 43, pp.309-311. ⟨10.1049/el:20073170⟩. ⟨hal-00283497⟩

• Article dans une revue

On-line tools for microscopic and macroscopic monitoring of microwave processing

S. Vaucher, P. Unifantowicz, C. Ricard, Luc Dubois, M. Kuball, J.-M. Catala-Civera, Dominique Bernard, M. Stampanoni, R. Nicula

Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow...

Physica B: Condensed Matter, 2007, 398 (2), pp.191-195. ⟨10.1016/j.physb.2007.04.064⟩. ⟨hal-00179746⟩

• Article dans une revue

Atomic scale study of TbCo2.5/Fe multilayers by laser-assisted tomographic atom probe

A. Grenier, R. Larde, E. Cadel, F. Vurpillot, J. Juraszek, J. Teillet, Nicolas Tiercelin

Journal of Applied Physics, 2007, 102, pp.033912-1-4. ⟨10.1063/1.2761825⟩. ⟨hal-00255798⟩

• Article dans une revue

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩