Publicaciones

• Ouvrages

IEEE Journal of Solid-State Circuits, 42, 7, Special issue on ESSCIRC 2006

A. Kaiser, S. Rusu

IEEE, pp.1449-1628, 2007. ⟨hal-00362397⟩

• Communication dans un congrès

Analysis and design of IDT/ZnO/Si resonator filter using coupling-of-modes theory

E. Ntagwirumugara, Tadeusz Gryba, Jean-Etienne Lefebvre

International Congress on Ultrasonics, ICU 2007, 2007, Austria. pp.CD-ROM, ⟨10.3728/ICUltrasonics.2007.Vienna.1081_ntagwirumugara⟩. ⟨hal-00362401⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩

• Communication dans un congrès

1.8 dB insertion loss 200 GHz CPW band pass filter integrated in HR SOI CMOS technology

F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud, S. Boret, Gilles Dambrine, Sylvie Lepilliet, B. Martineau, R. Pilard

IEEE MTT-S International Microwave Symposium, 2007, United States. pp.453-456, ⟨10.1109/MWSYM.2007.380486⟩. ⟨hal-00284029⟩

• Communication dans un congrès

65 nm HR SOI CMOS technology : emergence of millimeter-wave SoC

F. Gianesello, S. Montusclat, B. Martineau, D. Gloria, C. Raynaud, S. Boret, Gilles Dambrine, Sylvie Lepilliet, R. Pilard

IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007, 2007, United States. pp.555-558, ⟨10.1109/RFIC.2007.380945⟩. ⟨hal-00284030⟩

• Communication dans un congrès

Fabrication of 945 MHz band film surface acoustic wave resonators using ZnO thin film with Si substrate

E. Ntagwirumugara, Tadeusz Gryba, V. Zhang, Julien Carlier, Jean-Etienne Lefebvre

This paper, we present the analysis of a ladder-type filter, in the frequency band of 945 MHz, developed on a structure with two layers of a ZnO film on a Silicon substrate with aluminum (AT) IDTs using coupling of modes (COM) theory. The case of a layer ZnO deposited on a not-piezoelectric...

IEEE International Frequency Control Symposium joint with the 21st European Frequency and Time Forum, 2007, Genève, Switzerland. pp.176-180, ⟨10.1109/FREQ.2007.4319058⟩. ⟨hal-00284004⟩

• Communication dans un congrès

Surface charge effects in ballistic T-branch nanojunctions

I. Iniguez de La Torre, J. Mateos, T. Gonzalez, D. Pardo, S. Bollaert, Yannick Roelens, A. Cappy

Spanish Conference on Electron Devices, 2007, Spain. pp.48-51, ⟨10.1109/SCED.2007.383993⟩. ⟨hal-00284056⟩

• Communication dans un congrès

Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime

S. Bollaert, L. Desplanque, X. Wallart, Yannick Roelens, M. Malmkvist, M. Borg, E. Lefebvre, J. Grahn, D. Smith, Gilles Dambrine

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.20-23, ⟨10.1109/EMICC.2007.4412637⟩. ⟨hal-00362727⟩

• Article dans une revue

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new...

Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩

• Communication dans un congrès

Dynamic parameters of magnetostriction ferrites

V.V. Rudenko, A.I. Yevstafyev, Philippe Pernod, V.L. Preobrazhensky, V.N. Berzhansky, T.A. Vlasova, A.V. Kunevich

International Conference on Functional Materials, ICFM 2007, 2007, France. pp.281. ⟨hal-00284131⟩