Publicaciones

• Article dans une revue

Parametric interaction in the Terfenol-D based magnetostrictive composite and nickel ferrite

V. Rudenko, V. Berzhansky, S. Polulyakh, Philippe Pernod, Vladimir Preobrazhensky

Functional Materials, 2007, 14, pp.218-222. ⟨hal-00255800⟩

• Article dans une revue

Reversible electrowetting on superhydrophobic silicon nanowires

N. Verplanck, Yannick Coffinier, E. Galopin, J.C. Camart, Rabah Boukherroub, V. Thomy

Nano Letters, 2007, 7, pp.813-817. ⟨10.1021/nl062606c⟩. ⟨hal-00255843⟩

• Communication dans un congrès

Le projet Polycond : synthèse et caractérisation de polymères conducteurs pour des applications CEM

Jean-Luc Wojkiewicz, Bernard Demoulin, S. Baranowski, Lamine Kone, Mohamed Nedim Ben Slimen, Jean-Claude Carru, Joël Gest, C. Liang, Gérard Leroy

TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications (JFMMA), Mar 2007, Fès, Maroc. ⟨hal-00367726⟩

• Communication dans un congrès

Barrier layer downscaling of InAlN/GaN HEMTs

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, M. Knez, David Troadec, Christophe Gaquière, A. Chuvilin, U. Kaiser, N. Grandjean, E. Kohn

65th Annual Device Research Conference, DRC 2007, 2007, United States. pp.109-110, ⟨10.1109/DRC.2007.4373673⟩. ⟨hal-00284407⟩

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the...

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩

• Article dans une revue

Low-temperature-grown GaAs : modeling of transient reflectivity experiments

V. Ortiz, J. Nagle, Jean-Francois Lampin, Emmanuel Peronne, Antigoni Alexandrou

Journal of Applied Physics, 2007, 102, pp.043515-1-9. ⟨10.1063/1.2763971⟩. ⟨hal-00283048⟩

• Article dans une revue

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• Article dans une revue

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.E. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn

Electronics Letters, 2007, 43, pp.309-311. ⟨10.1049/el:20073170⟩. ⟨hal-00283497⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at...

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩