Publicaciones

• Article dans une revue

Adsorption and electronic excitation of biphenyl on Si(100): a theoretical STM analysis

M. Dubois, C. Delerue, A. Rubio

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.041302-1-4. ⟨10.1103/PhysRevB.75.041302⟩. ⟨hal-00283120⟩

• Communication dans un congrès

Direct digital RF signal generation for software-defined radio transmitters using reconfigurable delta-sigma modulators

C. Nsiala-Nzeza, A. Frappé, J. Gorisse, A. Flament, B. Stefanelli, A. Cathelin, A. Kaiser

11th International Symposium on Microwave and Optical Technology, ISMOT-2007, 2007, Monte Porzio Catone, Italy. pp.221-224. ⟨hal-00284386⟩

• Communication dans un congrès

Picosecond ultrasonics as a helpful technique for introducing a new electrode material in BAW technology : the iridium case

Arnaud Devos, J. Olivares, M. Clement, E. Iborra, S. Gonzalez-Castilla, N. Rimmer, A. Rastogi

IEEE International Ultrasonics Symposium, 2007, United States. pp.1433-1436, ⟨10.1109/ULTSYM.2007.360⟩. ⟨hal-00283997⟩

• Communication dans un congrès

Proposition of atomic force probes based on silicon ring-resonators

M. Faucher, B. Walter, A.S. Rollier, K. Segueni, Bernard Legrand, G. Couturier, J.P. Aimé, C. Bernard, R. Boisgard, L. Buchaillot

14th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers'07, 2007, France. pp.1529-1532, ⟨10.1109/SENSOR.2007.4300436⟩. ⟨hal-00284391⟩

• Communication dans un congrès

UWB transmitter in BiCMOS SiGe 0.13 μm technology for 60 GHz WLAN communication

M. Devulder, N. Deparis, I. Telliez, S. Pruvost, Francois Danneville, N. Rolland, P. A. Rolland

IEEE International Conference on Ultra-Wideband, ICUWB 2007, 2007, Singapore. pp.432-435, ⟨10.1109/ICUWB.2007.4380983⟩. ⟨hal-00284091⟩

• Article dans une revue

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Nicolas Sarazin, Olivier Jardel, Erwan Morvan, Raphaël Aubry, M. Laurent, M. Magis, Maurice Tordjman, M. Alloui, O. Drisse, J. Di Persio, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Nicolas Vellas, Christophe Gaquière, Didier Theron

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good...

Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩. ⟨hal-00283494⟩

• Proceedings/Recueil des communications

Il principio di Torricelli prima di Torricelli (Torricelli's Principle before Torricelli)

Danilo Capecchi, Raffaele Pisano

Proceedings of the 24th SISFA Conference Societá Italiana degli Storici della Fisica e dell'Astronomia, Bibliopolis, pp.107-112, 2007, 978-88-7088-537-7. ⟨hal-04514966⟩

• Article dans une revue

Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges

J. Kuzmik, S. Bychikhin, R. Lossy, H.J. Würfl, M.A. Di Forte-Poisson, J.P. Teyssier, Christophe Gaquière, D. Pogany

Solid-State Electronics, 2007, 51, pp.969-974. ⟨10.1016/j.sse.2007.04.001⟩. ⟨hal-00283496⟩

• Article dans une revue

Templates for LaAlO3 epitaxy on silicon

Pierre Boulenc, Isabelle Devos

As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0...

Microelectronics Reliability, 2007, 47 (4-5), pp.709-713. ⟨10.1016/j.microrel.2007.02.010⟩. ⟨hal-00285661⟩

• Article dans une revue

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, Sophie Guéron, Mathias Kobylko, Mathieu Kociak, Helene Bouchiat, Vincent Agache, Anne-Sophie Rollier, Lionel Buchaillot, Anne Marie Bonnot, A.Yu. Kasumov

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport...

Applied physics. A, Materials science & processing, 2007, 88, pp.687-691. ⟨10.1007/s00339-007-4028-3⟩. ⟨hal-00351737⟩