Publicaciones

• Article dans une revue

On-line tools for microscopic and macroscopic monitoring of microwave processing

S. Vaucher, P. Unifantowicz, C. Ricard, Luc Dubois, M. Kuball, J.-M. Catala-Civera, Dominique Bernard, M. Stampanoni, R. Nicula

Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow...

Physica B: Condensed Matter, 2007, 398 (2), pp.191-195. ⟨10.1016/j.physb.2007.04.064⟩. ⟨hal-00179746⟩

• Article dans une revue

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• Article dans une revue

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩

• Article dans une revue

Energy transfer between semiconductor nanocrystals : validity of Förster's theory

Guy Allan, Christophe Delerue

We theoretically study the energy transfer between semiconductor nanocrystals and we calculate the rate of this process in the case of direct-gap (InAs) and indirect-gap (Si) semiconductors. The calculations are based on the tight-binding method that enables us to determine the transfer rate,...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.195311. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at...

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

Atomic scale study of TbCo2.5/Fe multilayers by laser-assisted tomographic atom probe

A. Grenier, R. Larde, E. Cadel, F. Vurpillot, J. Juraszek, J. Teillet, Nicolas Tiercelin

Journal of Applied Physics, 2007, 102, pp.033912-1-4. ⟨10.1063/1.2761825⟩. ⟨hal-00255798⟩

• Article dans une revue

Low-temperature-grown GaAs : modeling of transient reflectivity experiments

V. Ortiz, J. Nagle, Jean-Francois Lampin, Emmanuel Peronne, Antigoni Alexandrou

Journal of Applied Physics, 2007, 102, pp.043515-1-9. ⟨10.1063/1.2763971⟩. ⟨hal-00283048⟩

• Communication dans un congrès

An impulse response model for the 60 GHz channel based on spectral techniques of a-stable processes

N. Azzaoui, Laurent Clavier

IEEE International Conference on Communications, ICC 2007, 2007, United Kingdom. pp.5040-5045, ⟨10.1109/ICC.2007.832⟩. ⟨hal-00366984⟩

• Article dans une revue

Strong generation of coherent acoustic phonons in semiconductor quantum dots

Arnaud Devos, F. Poinsotte, Jesse Groenen, O. Dehaese, N. Bertru, Anne Ponchet

Physical Review Letters, 2007, 98, pp.207402-1-4. ⟨10.1103/PhysRevLett.98.207402⟩. ⟨hal-00255740⟩

• Article dans une revue

Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE Transactions on Electron Devices, 2007, 54, pp.2815-2822. ⟨10.1109/TED.2007.907801⟩. ⟨hal-00255757⟩