Publicaciones

• Article dans une revue

Effect of growth temperature on defect states of GaNAsSb intrinsic layer in GaAs/GaNAsSb/GaAs photodiode for 1.3µm application

Satrio Wicaksono, Soon Fatt Yoon, Wan Khai Loke, Kianhuan Tan, Kim Luong Lew, Malek Zegaoui, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas

A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a...

Journal of Applied Physics, 2007, 102 (4), pp.044505. ⟨10.1063/1.2769801⟩. ⟨hal-00283082⟩

• Communication dans un congrès

Silicon nano-ESI emitters for mass spectrometry: a mixed micromechanical and microfluidic design

B. Legrand, L. Buchaillot, A. Ashcroft, S. Arscott

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, Jun 2007, Lyon, France. pp.791-794, ⟨10.1109/SENSOR.2007.4300249⟩. ⟨hal-02347474⟩

• Article dans une revue

The interface between a polar perovskite oxide and silicon from monoatomic lines

I. Devos, P. Boulenc

We report a study on the interface between polar high-κ materials and the Si(001)-(2×1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed by oxidation, whose stability against oxygen coverage is...

Applied Physics Letters, 2007, 90 (7), pp.072906-1-3. ⟨10.1063/1.2435624⟩. ⟨hal-00283121⟩

• Article dans une revue

Self-oscillation mode due to fluid-structure interaction in a micromechanical valve

Olivier Ducloux, Abdelkrim Talbi, Laetitia Gimeno, Romain Viard, Philippe Pernod, Vladimir L. Preobrazhensky, Alain Merlen

This letter presents an original actuation mode for a micromechanical valve based on the induction of a self-oscillation, provided by the strong coupling between a mobile mechanical part and the fluid flow. The presented structure consists of a rigid silicon pad processed on a flexible membrane,...

Applied Physics Letters, 2007, 91 (3), pp.034101. ⟨10.1063/1.2752530⟩. ⟨hal-00203691⟩

• Communication dans un congrès

Les activités CND par ultrasons à l'IEMN-DOAE. Application : estimation des contraintes résiduelles

Marc Duquennoy

1ère Journée Scientifique et Technique ECND Grand Ouest, 2007, Le Mans, France. ⟨hal-00285344⟩

• Communication dans un congrès

Caractérisation des fuites électromagnétiques provenant de connecteurs imparfaitement blindés

Youssef Bouri, Lamine Kone, Stephane Barlerin, Jean Razafiarivelo, S. Baranowski, Bernard Demoulin

GDR ONDES - Journée thématique : Modélisation multi domaines et multi physiques en CEM, 2007, Châtillon, France. ⟨hal-00285350⟩

• Communication dans un congrès

Molecular scale electronics : status and perspectives

D. Vuillaume

Journées Scientifiques CNFRS : Nanosciences et Radioélectricité, 2007, Paris, France. ⟨hal-00286351⟩

• Autre publication scientifique

Contribution à l'étude et à la réalisation d'un numériseur ulta large bande à haute résolution en filière TBH InP

H. El Aabbaoui

2007. ⟨hal-00285729⟩

• Communication dans un congrès

Electronic transport through alkylthiol monolayers under mechanical stress measured by Conducting-AFM

S. Lenfant, D. Deresmes, D. Vuillaume

European Materials Research Society Spring Meeting, Symposium K : Nanoscale self-assembly and patterning, 2007, Strasbourg, France. ⟨hal-00285224⟩

• Communication dans un congrès

Left handed metamaterials at terahertz frequencies

D. Lippens

Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz 2007, 2007, Cardiff, Wales, United Kingdom. ⟨hal-00286307⟩