Publicaciones

• COMM

Surface capping of AlInN/GaN HEMT structures

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.-F Carlin, M Gonschorek, E Feltin, M A Py, N Grandjean, E Kohn

European Workshop on III-Nitride Semiconductor Materials and Devices, Sep 2006, Heraklion, Greece. ⟨hal-03281380⟩

• ART

Determination of the d31 piezoelectric coefficient of PbZrxTi1−xO3 thin films using multilayer buckled micromembranes

C. Ayela, Liviu Nicu, Caroline Soyer, Eric Cattan, C. Bergaud

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d31 of PbZrxTi1-xO3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built...

Journal of Applied Physics, 2006, 100 (5), pp.054908. ⟨10.1063/1.2338139⟩. ⟨hal-02470523⟩

• COMM

Archimedes’s centres of the gravity theory as a logical foundation in Torricelli mechanics?

Raffaele Pisano

2nd ESHS European Congress for the History of Science, 6–9 September, ESHS & University of Krakow, Sep 2006, Krakow, Poland. ⟨hal-04519303⟩

• ART

Transmission filtering of a waveguide coupled to a stub microresonator

Y. Pennec, B. Djafari-Rouhani, Abdellatif Akjouj, J. Vasseur, Leonard Dobrzynski, J. Vilcot, M. Beaugeois, M. Bouazaoui, R. Fikri, J. Vigneron

Applied Physics Letters, 2006, 89 (10), pp.101113. ⟨10.1063/1.2345251⟩. ⟨hal-04070515⟩

• COMM

Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scaterring spectroscopy and transient interferometric mapping

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Di Forte-Poisson, B. Grimbert, Christophe Gaquière

Proceedings of the first European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. ⟨hal-00337246⟩

• ART

Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The power dissipation in a semiconductor device usually generates a self-heating effect, which becomes very significant for gallium nitride power applications. The operating temperature of these devices increases significantly, and the transport properties are then degraded (IEEE Electron Device...

IEEE Transactions on Electron Devices, 2006, 53 (9), pp.2237-2242. ⟨10.1109/TED.2005.881014⟩. ⟨hal-00127943⟩

• ART

Simple self-consistent theory of adhesion at a bimetallic interface

G. Allan, M. Lannoo, Leonard Dobrzynski

Philosophical Magazine, 2006, 30 (1), pp.33-45. ⟨10.1080/14786439808206531⟩. ⟨hal-04069879⟩

• PATENT

Microrésonateur

N. Abele, P. Ancey, A. Talbot, K. Segueni, G. Bouche, T. Skotnicki, S. Monfray, F. Casset

N° de brevet: FR2881416 (A1). 2006. ⟨hal-00372356⟩

• ART

An 8-GHz ft carbon nanotube field-effect-transistor for gigahertz range applications

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device...

IEEE Electron Device Letters, 2006, 27 (08), pp.681-683. ⟨10.1109/LED.2006.879042⟩. ⟨hal-00126517⟩

• ART

Management of Acute Upper Gastrointestinal Bleeding in a District Hospital

Abdul Kasem, Tamer Kamal, Nanjanagud Chandra, Iyad Dayoub, Hudson Munyira, Shamsi El-Hasani

Journal of Laparoendoscopic & Advanced Surgical Techniques, 2006, 16 (4), pp.355-361. ⟨10.1089/lap.2006.16.355⟩. ⟨hal-03383075⟩