Publicaciones

Affichage de 12291 à 12300 sur 16062


  • COMM

Influence of surface trapping on determination of electron saturation velocity in AlGaN/GaN heterostructure

J. Kuzmik, S. Bychikhin, E. Pichonat, Christophe Gaquière, E. Morvan, D. Pogany

28th International Conference of the Physics of Semiconductors, Jul 2006, Vienne, Austria. ⟨hal-00337251⟩

  • ART

Direct amination of hydrogenated-terminated boron doped diamond surfaces

Sabine Szunerits, Charafeddine Jama, Yannick Coffinier, Bernadette Marcus, Didier Delabouglise, Rabah Boukherroub

This paper reports on direct amination of hydrogen-terminated polycrystalline boron doped electrode. The technique consists of NH<sub>3</sub> plasma treatment of hydrogenated diamond substrate to generate surface terminal amino groups. The aminated diamond surface was further...

Electrochemistry Communications, 2006, 8 (7), pp. 1185-1190. ⟨10.1016/j.elecom.2006.05.023⟩. ⟨hal-00333312⟩