Publicaciones

• Article dans une revue

Power measurement setup for large signal microwave characterization at 94 GHz

F Medjdoub, S. Vandenbrouck, Christophe Gaquière, E. Delos, M. Zaknoune, D. Theron

IEEE Electron Device Letters, 2006, 16, pp.218-220. ⟨hal-00127945⟩

• Communication dans un congrès

Triple issues for triple junctions

F. Cleri

Metallphysikalisches Kolloquium am IMM (Institute of Physical Metallurgy and Metal Physics), 2006, Aachen, Germany. ⟨hal-00127949⟩

• Communication dans un congrès

Effets de contrainte sur la nucléation de boîtes quantiques de semiconducteurs sur substrat nanostructuré

C. Priester

10èmes Journées de la Matière Condensée, 2006, Toulouse, France. ⟨hal-00127065⟩

• Communication dans un congrès

Bit and packet error rates for ad hoc networks based on up-converted IR-UWB signals at 60 GHz

H. El Ghannudi, Laurent Clavier, A. Bendjaballah, P.A. Rolland

2006, 5 pp. ⟨hal-00126828⟩

• Communication dans un congrès

20GHz bandwidth digitizer for single shot analysis

H. El Aabbaoui, B. Gorisse, Jean-Francois Lampin, A. Benlarbi-Delaï, N. Rolland, V. Allouche, N. Fel, B. Riondet, P. Leclerc, P.A. Rolland

2006, 4 pp. ⟨hal-00126825⟩

• Article dans une revue

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Jérémi Torres, P. Nouvel, A. Akwoue-Ondo, F. Teppe, A. Shchepetov, S. Bollaert

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz...

Applied Physics Letters, 2006, 89 (20), pp.201101.1-201101.3. ⟨10.1063/1.2388142⟩. ⟨hal-00105454⟩

• Communication dans un congrès

Analysis and modeling of substrate impedance network in RF CMOS

Emmanuel Bouhana, Patrick Scheerer, Samuel Boret, Daniel Gloria, Gilles Dambrine, Michel Minondo, Hervé Jaouen

This paper presents a new approach for analyzing and modeling the substrate impedance network in RF CMOS. Thanks to preliminary and proper de-embedding of known parasitics, the substrate network is directly identified. Using this approach on MOS transistors from 130 down to 65 nm technologies...

IEEE International Conference on Microelectronic Test Structures, Mar 2006, Austin, TX, United States. pp.65-70, ⟨10.1109/ICMTS.2006.1614277⟩. ⟨hal-00126801⟩

• Communication dans un congrès

The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics

K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume

Indo-French workshop on molecular and organic devices, 2006, Lille, France. ⟨hal-00127157⟩

• Communication dans un congrès

Etat de contrainte de fins fils de silicium

A. Metsue, C. Priester

10èmes Journées de la Matière Condensée, 2006, Toulouse, France. ⟨hal-00127118⟩

• Article dans une revue

Room-temperature terahertz emission from nanometer field-effect transistors

N. Dyakonova, A.E. Fatimy, J. Lusakowski, W. Knap, M.I. Dyakonov, M.A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Applied Physics Letters, 2006, 88, pp.141906-1-3. ⟨hal-00126524⟩