Publicaciones

Affichage de 12611 à 12620 sur 16059


  • ART

Charging and discharging processes of carbon nanotubes probed by electrostatic force microscopy

M. Zdrojek, Thierry Melin, H. Diesinger, D. Stievenard, W. Gebicki, L. Adamowicz

Journal of Applied Physics, 2006, 100, pp.114326/1-10. ⟨hal-00127829⟩

  • ART

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is...

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩

  • ART

Detecting the Chemoselective Ligation of Peptides to Silicon with the Use of Cobalt-Carbonyl Labels

Christophe Olivier, Aurore Perzyna, Yannick Coffinier, B. Grandidier, Didier Stiévenard, Oleg Melnyk, Jean-Olivier Durand

Langmuir, 2006, 22 (16), pp.7059-7065. ⟨10.1021/la060370m⟩. ⟨hal-00186079⟩

  • COMM

Optimisation conjointe source/canal de la qualité vidéo dans un contexte de transmission sur ligne ADSL

C. Goudemand, François-Xavier Coudoux, Marc G. Gazalet

Journées Codage conjoint et canal radioélectrique, GDR ISIS, 2006, Paris, France. ⟨hal-00128170⟩

  • ART

BCH coding performance evaluation on a land mobile channel based OFDM system

A. Seddiki, A. Djebbari, Jean-Michel Rouvaen, Abdelmalik Taleb-Ahmed

Information Technology Journal, 2006, 5, pp.930-936. ⟨hal-00128167⟩

  • COMM

Carbon nanotube field-effect transistor for GHz operation

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Jean-Sébastien Borghetti, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F T of 1 GHz, with a slope of -20dB/decade, for the first time

European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.206-209, ⟨10.1109/ESSDER.2006.307674⟩. ⟨hal-00128189⟩

  • COMM

Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM

B. Grandidier, R. Stiufiuc, Maxime Berthe, C. Delerue, D. Deresmes, J.P. Nys, D. Stievenard, R. Rurrali, N. Lorente

10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France. ⟨hal-00127920⟩