Publicaciones
Affichage de 12631 à 12640 sur 16278
Nonlinear electrical properties of three-terminal junctions
D. Wallin, I. Shorubalko, H.Q. Xu, A. Cappy
Applied Physics Letters, 2006, 89, pp.092124-1-3. ⟨hal-00126525⟩
Transistors organiques utilisant une monocouche auto-assemblée comme élément actif
M. Mottaghi, P. Lang, F. Rodriguez, A. Yassar, G. Horowitz, S. Lenfant, D. Tondelier, D. Vuillaume
Dispositfs Electroniques Organiques, DIELOR 06, 2006, Paris, France. ⟨hal-00127139⟩
Etude par microscopie à champ proche de structures à base de matériaux III-N pour émetteurs électroniques planaires
Sophie Barbet, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson, Thierry Melin, Didier Theron
10èmes Journées de la Matière Condensée, Aug 2006, Toulouse, France. ⟨hal-00127893⟩
Electric force microscopy of individually charged semiconductor nanoparticles
Heinrich Diesinger, Thierry Melin, Sophie Barbet, D. Deresmes, Didier Stiévenard
Physica Status Solidi A (applications and materials science), 2006, 203, pp.1344-1347. ⟨10.1002/pssa.200566162⟩. ⟨hal-00127830⟩
Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals
Christophe Delerue, Guy Allan, Cécile Reynaud, Olivier Guillois, Gilles Ledoux, Friedrich Huisken
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.235318-1-4. ⟨10.1103/PhysRevB.73.235318⟩. ⟨hal-00127844⟩
Démultiplexage des ondes acoustiques dans un cristal phononique à deux dimensions
Yan Pennec, Bahram Djafari-Rouhani, A. Khelif, Jerome O. Vasseur
10èmes Journées de la Matière Condensée, 2006, Toulouse, France. ⟨hal-00127862⟩
Point-defect recombination efficiency at grain boundaries in irradiated SiC
A. Moriani, F. Cleri
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.214113-1-9. ⟨hal-00127847⟩
Performance indicator for DMT systems with non perfect channel estimation
David Buèche, Patrick Corlay, Marc G. Gazalet, François-Xavier Coudoux, Marc Slachciak
European Transactions on Telecommunications, 2006, 17 (5), pp.591-597. ⟨10.1002/ett.1113⟩. ⟨hal-00128172⟩
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
N. Sghaier, M. Trabelsi, N. Yacoubi, J.M. Bluet, A. Souifi, G. Guillot, Christophe Gaquière, Jean-Claude de Jaeger
Microelectronics Journal, 2006, 37, pp.363-370. ⟨hal-00127942⟩
Influence of the deposition parameters on the texture of boron nitride thin films synthesized in a microwave plasma-enhanced reactor
P. Thévenin, M. Eliaoui, A. Ahaitouf, A. Soltani, A. Bath
Surface and Coatings Technology, 2006, 200, pp.6444-6448. ⟨hal-00127946⟩