Publicaciones

• Communication dans un congrès

Convertisseur numérique analogique 1 bit à 7,8Gech/s pour émetteurs RF numériques en technologie CMOS 90nm

A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin

2006, pp.115-118. ⟨hal-00138681⟩

• Article dans une revue

Simultaneous dual band transmission over multimode fiber-fed indoor wireless network

A. Nkansah, A. Das, C. Lethien, Jean-Pierre Vilcot, N.J. Gomes, I.J. Garcia, J.C. Batchelor, D. Wake

IEEE Microwave and Wireless Components Letters, 2006, 16, pp.627-629. ⟨hal-00154942⟩

• Communication dans un congrès

Blind equalization via the use of generalized pattern search optimization and zero forcing sectionally convex cost function

A. Zaouche, Iyad Dayoub, Jean-Michel Rouvaen

2006, 6 pp. ⟨hal-00154940⟩

• Communication dans un congrès

Détection des marnières de Haute Normandie par sismique haute résolution

Bogdan Piwakowski, Lynda Driad-Lebeau, Arkadiusz Kosecki, Pawel Safinowski

Ce papier présente des exemples d'application de la sismique haute résolution à la détection et localisation des cavités souterraines qui résultent d'exploitation de marne et craie dans la région de Haute Normandie. Les vides se trouvent à profondeurs 35 - 40 m. L'investigation est..., This paper presents examples of application of the high resolution reflection seismics for the detection and localisation of underground voids which are old explorations of marl and chalk in Upper Normandy region in France. The voids occur at depths of 35-40 m. The survey is conducted using the...

Journées AGAP Qualité - GEOFCAN "Géophysique appliquée à la reconnaissance des cavités et des structures anthropiques", Nov 2006, Besançon, France. pp.28-31. ⟨ineris-00973240⟩

• Communication dans un congrès

Cross-talk coupling, a tool to characterize electromagnetic immunity of integrated circuits

S. Bazzoli, N. Ben Slimen, L. Kone, B. Demoulin

2006, pp.223-240. ⟨hal-00140183⟩

• Communication dans un congrès

Optimal bit rate adaptation for layered video transmission over spectrally shaped channels using multicarrier modulation

C. Goudemand, François-Xavier Coudoux, Marc G. Gazalet

2006, pp.13-16. ⟨hal-00147739⟩

• Article dans une revue

Terahertz detection by GaN/AlGaN transistors

A. El Fatimy, S.B. Tombet, F. Teppe, W. Knap, D.B. Veksler, S. Rumyantsev, M.S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, A. Cappy, D. Theron

Electronics Letters, 2006, 42, pp.1342-1344. ⟨hal-00147740⟩

• Communication dans un congrès

High crosstalk InP digital optical switch for microwave application

Malek Zegaoui, Joseph Harari, D. Lauvernier, Didier Decoster, Jean Chazelas

Because electro-optic switches are key elements for the synthesis of large bandwidth, high dynamic, true time delay optically controlled microwave antennas, we designed, fabricated and characterized a new digital optical switch grown on InP substrate, and based on carrier-induced effects. The...

Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components/Architectures for Microwave Systems and Displays, Sep 2006, Stockholm, Sweden. pp.63990M-1-4. ⟨hal-00147744⟩

• Article dans une revue

Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals

Christophe Delerue, Guy Allan, Cécile Reynaud, Olivier Guillois, Gilles Ledoux, Friedrich Huisken

The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.235318 1-4. ⟨10.1103/PhysRevB.73.235318⟩. ⟨hal-00092072⟩

• Article dans une revue

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Jérémi Torres, P. Nouvel, A. Akwoue-Ondo, F. Teppe, A. Shchepetov, S. Bollaert

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz...

Applied Physics Letters, 2006, 89 (20), pp.201101.1-201101.3. ⟨10.1063/1.2388142⟩. ⟨hal-00105454⟩