Publicaciones

• ART

Silicon surface nano-oxidation using scanning probe microscopy

D. Stievenard, Bernard Legrand

Progress in Surface Science, 2006, 81, pp.112-140. ⟨hal-00127846⟩

• ART

Effective dielectric constant of nanostructured Si layers

Christophe Delerue, Guy Allan

We calculate the dielectric response of single layers of cubic and spherical Si nanocrystals using a self-consistent tight binding approach. We show that the effective dielectric constant is strongly influenced by the nanostructuring, leading to a strong reduction with respect to the bulk...

Applied Physics Letters, 2006, 88, pp.173117-1-3. ⟨10.1063/1.2198814⟩. ⟨hal-00127832⟩

• COMM

Pulse generator for UWB communication and radar applications with PPM and time hopping possibilities

N. Deparis, Christophe Loyez, N. Rolland, P.A. Rolland

2006, 5 pp. ⟨hal-00126824⟩

• ART

Packaging methodology for RF devices using a BCB membrane transfert technique

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2006, 16, pp.2384-2388. ⟨hal-00126798⟩

• COMM

Weak NLOS channel sounding

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delaï

2006, pp.707-710. ⟨hal-00147513⟩

• COMM

Intégration des réseaux de câbles dans la simulation CEM automobile en hautes fréquence

Guillaume Andrieu, L. Kone, F. Bocquet, B. Demoulin, J.P. Parmentier

2006, pp.278-280. ⟨hal-00142607⟩

• ART

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents...

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• ART

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory...

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• ART

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to...

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• COMM

A new BCB film zero-level packaging for RF devices

S. Seok, N. Rolland, P.A. Rolland

2006, pp.1118-1121. ⟨hal-00147516⟩